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PSMN4R3-30PL
N-channel 30 V 4.3 m鈩?logic level MOSFET
PSMN4R3-30PL
N-channel 30 V 4.3 mΩ logic level MOSFET
Rev. 01 — 16 June 2009 Product data sheet Product profile
1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for logic level gate drive
sources
1.3 Applications DC-to-DC converters Load switiching Motor control Server power supplies
1.4 Quick reference data[1] Continuous current is limited by package.
[2] Measured 3 mm from package.
Table 1. Quick referenceVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 30 V drain current Tmb =25°C; VGS =10V;
see Figure 1
[1] - - 100 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 - - 103 W
Dynamic characteristicsQGD gate-drain charge VGS= 4.5 V; ID =25A;
VDS=15 V; see Figure 14;
see Figure 15 -nC
Static characteristicsRDSon drain-source
on-state resistance
VGS =10V; ID =15A; =25 °C; see Figure 13
[2] -3.5 4.3 mΩ
NXP Semiconductors PSMN4R3-30PL
N-channel 30 V 4.3 mΩ logic level MOSFET Pinning information Ordering information
Table 2. Pinning information gate
SOT78
(TO-220AB; SC-46) drain source D mounting base; connected to
drain
Table 3. Ordering informationPSMN4R3-30PL TO-220AB;
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
NXP Semiconductors PSMN4R3-30PL
N-channel 30 V 4.3 mΩ logic level MOSFET Limiting values[1] Continuous current is limited by package.
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 30 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -30 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 [1] -80 A
VGS =10V; Tmb =25°C; see Figure 1 [1] -100 A
IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C; see Figure 3 -465 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -103 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Source-drain diode source current Tmb =25°C [1] -100 A
ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 465 A
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source avalanche
energy
VGS =10V; Tj(init) =25°C; ID =100 A; Vsup≤30V;
RGS =50 Ω; unclamped
-74 mJ
NXP Semiconductors PSMN4R3-30PL
N-channel 30 V 4.3 mΩ logic level MOSFET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from
junction to mounting
base
see Figure 4 -1 1.5 K/W
NXP Semiconductors PSMN4R3-30PL
N-channel 30 V 4.3 mΩ logic level MOSFET CharacteristicsTable 6. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj =25°C 30 - - V =250 µA; VGS =0V; Tj =-55°C 27 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS = VGS; Tj =25°C;
see Figure 10; see Figure 11
1.3 1.7 2.15 V =1mA; VDS = VGS; Tj= 175 °C;
see Figure 11
0.5 - - V =1mA; VDS = VGS; Tj =-55 °C;
see Figure 11
--2.45 V
IDSS drain leakage current VDS =30V; VGS =0V; Tj=25°C --1 µA
VDS =30V; VGS =0V; Tj= 125°C --40 µA
IGSS gate leakage current VGS =16V; VDS =0V; Tj=25°C - - 100 nA
VGS =-16 V; VDS =0V; Tj=25°C - - 100 nA
RDSon drain-source on-state
resistance
VGS =4.5 V; ID =15A; Tj =25°C [2] -4.5 6.2 mΩ
VGS =10V; ID =15A; Tj= 100 °C;
see Figure 12; see Figure 13
--6 mΩ
VGS =10V; ID =15A; Tj =25°C;
see Figure 13;
[2] -3.5 4.3 mΩ gate resistance f=1 MHz - 1 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =25A; VDS =15V; VGS =4.5V;
see Figure 14; see Figure 15
-19 - nC =25A; VDS =15V; VGS =10V;
see Figure 14; see Figure 15 41.5 - nC
QGS gate-source charge ID =25A; VDS =15V; VGS =4.5V;
see Figure 14; see Figure 15 - nC
QGS(th) pre-threshold
gate-source charge - nC
QGS(th-pl) post-threshold
gate-source charge - nC
QGD gate-drain charge - 5 - nC
VGS(pl) gate-source plateau
voltage
VDS =15V; see Figure 14;
see Figure 15
-2.7 - V
Ciss input capacitance VDS =12V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 2400 - pF
Coss output capacitance - 500 - pF
Crss reverse transfer
capacitance 240 - pF
td(on) turn-on delay time VDS =20V; RL =0.5 Ω; VGS =10V;
RG(ext) =5.6Ω
-28 - ns rise time - 58 - ns
td(off) turn-off delay time - 44 - ns fall time - 21 - ns
NXP Semiconductors PSMN4R3-30PL
N-channel 30 V 4.3 mΩ logic level MOSFET[1] Tested to JEDEC standards where applicable.
[2] Measured 3 mm from package.
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0V; Tj =25°C;
see Figure 17 0.81 1.2 V
trr reverse recovery time IS =20A; dIS/dt= -100 A/µs; VGS =0V;
VDS =30V
-35 - ns recovered charge - 30 - nC
Table 6. Characteristics …continued
NXP Semiconductors PSMN4R3-30PL
N-channel 30 V 4.3 mΩ logic level MOSFET
