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PSMN3R8-30LL |PSMN3R830LLNXPN/a1284avaiN-channel DFN3333-8 30 V 3.7 m鈩?logic level MOSFET


PSMN3R8-30LL ,N-channel DFN3333-8 30 V 3.7 m鈩?logic level MOSFETApplications Battery protection Load switching DC-to-DC converters Power ORing1.4 Quick referen ..
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PSMN3R8-30LL
N-channel DFN3333-8 30 V 3.7 m鈩?logic level MOSFET
Product profile1.1 General description
Logic level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This product
is designed and qualified for use in a wide range of industrial, communications and power
supply equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Small footprint for compact designs Suitable for logic level gate drive
sources
1.3 Applications Battery protection DC-to-DC converters Load switching Power ORing
1.4 Quick reference data
PSMN3R8-30LL
N-channel DFN3333-8 30 V 3.7 mΩ logic level MOSFET
Rev. 4 — 12 December 2011 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj≥25 °C; Tj≤ 150°C - - 30 V drain current Tmb =25°C; VGS =10V;
see Figure 2
--40 A
Ptot total power dissipation Tmb=25 °C; see Figure 1 --69 W junction temperature -55 - 150 °C
Static characteristics
RDSon drain-source on-state resistance VGS= 4.5 V; ID =10A; Tj =25°C - 4.5 5.8 mΩ
VGS =10V; ID =10A; Tj =100 °C;
see Figure 12
--5.1 mΩ
VGS =10V; ID =10A; Tj=25 °C; see
Figure 13 3.7 mΩ
NXP Semiconductors PSMN3R8-30LL
N-channel DFN3333-8 30 V 3.7 mΩ logic level MOSFET Pinning information Ordering information
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =15A; VDS =15V;
see Figure 14; see Figure 15
-5.3 -nC
QG(tot) total gate charge - 38 - nC
VGS= 4.5 V; ID =15A; VDS =15V;
see Figure 14; see Figure 15
-18 -nC
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =40A;
Vsup≤30 V; unclamped; RGS =50Ω - 109 mJ
Table 1. Quick reference data …continued
Table 2. Pinning information
Table 3. Ordering information
PSMN3R8-30LL DFN3333-8 plastic thermal enhanced very thin small outline package; no
leads; 8 terminals
SOT873-1
NXP Semiconductors PSMN3R8-30LL
N-channel DFN3333-8 30 V 3.7 mΩ logic level MOSFET Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 150°C - 30 V
VDGR drain-gate voltage Tj≤ 150 °C; Tj≥25 °C; RGS =20kΩ -30 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb =100 °C; see Figure 2 -40 A
VGS =10V; Tmb=25 °C; see Figure 2 -40 A
IDM peak drain current pulsed; tp≤10 µs; Tmb=25 °C; see Figure 3 - 413 A
Ptot total power dissipation Tmb=25 °C; see Figure 1 -69 W
Tstg storage temperature -55 150 °C junction temperature -55 150 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C - 40 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 413 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25 °C; ID =40A;
Vsup≤30 V; unclamped; RGS =50Ω 109 mJ
NXP Semiconductors PSMN3R8-30LL
N-channel DFN3333-8 30 V 3.7 mΩ logic level MOSFET
NXP Semiconductors PSMN3R8-30LL
N-channel DFN3333-8 30 V 3.7 mΩ logic level MOSFET Thermal characteristics
[1] Rth(j-a) is guaranteed by design and assumes that the device is mounted on a 40mm x 40mm x 70µm copper pad at 20°C ambient
temperature. In practice Rth(j-a) will be determined by the customer’s PCB characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 -1 1.3 K/W
Rth(j-a) thermal resistance from junction to ambient [1]- 5360K/W
NXP Semiconductors PSMN3R8-30LL
N-channel DFN3333-8 30 V 3.7 mΩ logic level MOSFET CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source breakdown voltage ID= 0.25 mA; VGS =0V; Tj= -55°C 27 - - V= 0.25 mA; VGS =0V; Tj=25°C 30 --V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =150 °C;
see Figure 10
0.5 --V =1mA; VDS =VGS; Tj =25°C;
see Figure 11; see Figure 10
1.3 1.7 2.15 V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10
--2.6 V
IDSS drain leakage current VDS =30V; VGS =0V; Tj=25°C - 0.05 1 µA
VDS =30V; VGS =10V; Tj= 125°C --50 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 5 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 5 100 nA
RDSon drain-source on-state resistance VGS =4.5 V; ID =10A; Tj =25°C - 4.5 5.8 mΩ
VGS =10V; ID =10A; Tj =100 °C;
see Figure 12
--5.1 mΩ
VGS =10V; ID =10A; Tj =150 °C;
see Figure 12
-5.4 6.7 mΩ
VGS =10V; ID =10A; Tj =25°C;
see Figure 13 3.7 mΩ internal gate resistance (AC) f=1 MHz - 1 - Ω
Dynamic characteristics
QG(tot) total gate charge ID =15A; VDS =15V; VGS =10V;
see Figure 14; see Figure 15
-38 -nC =15A; VDS =15V; VGS =4.5V;
see Figure 14; see Figure 15
-18 -nC =0A; VDS =0V; VGS =10V - 35 - nC
QGS gate-source charge ID =15A; VDS =15V; VGS =10V;
see Figure 14; see Figure 15
-6.5 -nC
QGS(th) pre-threshold gate-source
charge =15A; VDS =15V; VGS =10V;
see Figure 14
-3.5 -nC
QGS(th-pl) post-threshold gate-source
charge -nC
QGD gate-drain charge ID =15A; VDS =15V; VGS =10V;
see Figure 14; see Figure 15
-5.3 -nC
VGS(pl) gate-source plateau voltage VDS=15 V; see Figure 14;
see Figure 15
-2.8 -V
Ciss input capacitance VDS =15V; VGS =0V; f=1MHz; =25 °C; see Figure 16 2085 - pF
Coss output capacitance - 396 - pF
Crss reverse transfer capacitance - 187 - pF
NXP Semiconductors PSMN3R8-30LL
N-channel DFN3333-8 30 V 3.7 mΩ logic level MOSFET
td(on) turn-on delay time VDS =15V; RL =1 Ω; VGS =4.5V;
RG(ext) =4.7 Ω; Tj =25°C
-27 -ns rise time - 67 - ns
td(off) turn-off delay time - 39 - ns fall time - 18 - ns
Source-drain diode
VSD source-drain voltage IS =10 A; VGS =0V; Tj =25°C;
see Figure 17 0.85 1.5 V
trr reverse recovery time IS =15 A; dIS/dt= 100 A/µs;
VGS =0V; VDS =15V
-36 -ns recovered charge - 30 - nC
Table 6. Characteristics …continued
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