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PSMN3R5-80ES from NXP/PH,NXP Semiconductors

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PSMN3R5-80ES

Manufacturer: NXP/PH

N-channel 80 V, 3.5 m鈩?standard level MOSFET in I2PAK

Partnumber Manufacturer Quantity Availability
PSMN3R5-80ES,PSMN3R580ES NXP/PH 10000 In Stock

Description and Introduction

N-channel 80 V, 3.5 m鈩?standard level MOSFET in I2PAK **Introduction to the PSMN3R5-80ES Electronic Component**  

The PSMN3R5-80ES is a high-performance N-channel MOSFET designed for power management applications. With a low on-resistance (RDS(on)) of just 3.5 mΩ, this component minimizes power losses, making it ideal for high-efficiency switching circuits. Its robust 80 V drain-source voltage (VDSS) rating ensures reliable operation in demanding environments, such as automotive systems, industrial power supplies, and DC-DC converters.  

Featuring a compact and thermally efficient package, the PSMN3R5-80ES offers excellent thermal performance, reducing the need for extensive heat dissipation solutions. Its fast switching characteristics enhance system responsiveness while maintaining low conduction losses. Additionally, the MOSFET is designed with strong avalanche energy tolerance, improving durability under transient voltage conditions.  

Engineers favor this component for its balance of performance, efficiency, and reliability. Whether used in motor control, battery management, or load switching applications, the PSMN3R5-80ES delivers consistent performance with minimal energy waste. Its combination of low resistance, high voltage tolerance, and thermal stability makes it a versatile choice for modern power electronics designs.  

For detailed specifications, always refer to the manufacturer’s datasheet to ensure proper integration within your circuit design.

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