PSMN1R5-40PS Fast Delivery |IC PHOENIX CO.,LIMITED

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PSMN1R5-40PS
N-channel 40 V 1.6 m鈩?standard level MOSFET in TO220
TO-220AB PSMN1R5-40PS
N-channel 40 V 1.6 mΩ standard level MOSFET in TO22015 July 2013 Product data sheet General description
Standard level N-channel MOSFET in SOT78 (TO220) using TrenchMOS technology.Product design and manufacture has been optimized for use in battery operated powertools. Features and benefits High efficiency due to low switching and conduction losses• Robust construction for demanding applications• Standard level gate Applications Battery-powered tools• Load switching• Motor control• Uninterruptible power supplies Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 40 V drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 [1] - - 150 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 338 W
Static characteristics
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13 1.9 2.3 mΩRDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 14
[2] - 1.3 1.6 mΩ
Dynamic characteristics
QGD gate-drain charge - 32 - nC
QG(tot) total gate charge
VGS = 10 V; ID = 75 A; VDS = 20 V;
Tj = 25 °C; Fig. 15; Fig. 16 - 136 - nC
NXP Semiconductors PSMN1R5-40PS
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220
Symbol Parameter Conditions Min Typ Max Unit
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
source avalancheenergy
VGS = 10 V; Tj(init) = 25 °C; ID = 150 A;
Vsup ≤ 40 V; unclamped; RGS = 50 Ω;
tp = 0.1 ms; Fig. 3 - 1.1 J
[1] Continuous current is limited by package[2] Measured 3 mm from package. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate D drain S source D drain2
TO-220AB (SOT78)
mbb076 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN1R5-40PS TO-220AB plastic single-ended package; heatsink mounted; 1 mountinghole; 3-lead TO-220AB SOT78 Marking
Table 4. Marking codes
Type number Marking code
PSMN1R5-40PS PSMN1R5-40PS
NXP Semiconductors PSMN1R5-40PS
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220 Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V
VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 40 V
VGS gate-source voltage -20 20 V
VGS = 10 V; Tmb = 100 °C; Fig. 1 [1] - 150 AID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1 [1] - 150 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 1301 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 338 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb = 25 °C [1] - 150 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1301 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 150 A;
Vsup ≤ 40 V; unclamped; RGS = 50 Ω;
tp = 0.1 ms; Fig. 3 1.1 J
[1] Continuous current is limited by package
NXP Semiconductors PSMN1R5-40PS
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220
003aak964 30 60 90 120 150 1800
Tj (°C)ID(A)(A)
(1)(1)
(1) Capped at 150A due to package
Fig. 1. Normalized continuous drain current as a
function of mounting base temperature
Tmb(°C)0 20015050 100
03aa16
Pder(%)
Fig. 2. Normalized total power dissipation as a
function of mounting base temperature
aaa-008377
10-3 10-2 10-1 1 101
tAL (ms)
IALIAL(A)(A)
(1)(1)
(2)(2)
NXP Semiconductors PSMN1R5-40PS
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220
003aak963
10-1 1 10 10210-123
VDS (V)ID(A)(A)DC
100 ms100 ms
10 ms10 ms
1 ms1 ms
100 us100 us
tp = 10 ustp = 10 us
Limit RDSon = VDS / IDLimit RDSon = VDS / ID
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance
from junction tomounting base
Fig. 5 - 0.22 0.44 K/W
Rth(j-a) thermal resistance
from junction toambient
Vertical in free air - 60 - K/W
003aaf327-1 1T0.5
0.2 th(j-mb)(K/W)
NXP Semiconductors PSMN1R5-40PS
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 - - VV(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 - - V
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 11 - 4.6 V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 11 - - V
VGS(th) gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 12; Fig. 11 3 4 V
VDS = 40 V; VGS = 0 V; Tj = 25 °C - 0.02 10 µAIDSS drain leakage current
VDS = 40 V; VGS = 0 V; Tj = 175 °C - 250 500 µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current
VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13 1.9 2.3 mΩ
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13 2.6 3.2 mΩ
RDSon drain-source on-stateresistance
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 14
[1] - 1.3 1.6 mΩ internal gate
resistance (AC)
f = 1 MHz - 1.1 - Ω
Dynamic characteristics
ID = 0 A; VDS = 0 V; VGS = 10 V - 133 - nCQG(tot) total gate charge 136 - nC
QGS gate-source charge - 52 - nC
QGS(th) pre-threshold gate-source charge - 30 - nC
QGS(th-pl) post-threshold gate-source charge - 22.5 - nC
QGD gate-drain charge
ID = 75 A; VDS = 20 V; VGS = 10 V;
Tj = 25 °C; Fig. 15; Fig. 16 32 - nC
VGS(pl) gate-source plateauvoltage ID = 75 A; VDS = 20 V; Tj = 25 °C;
Fig. 15; Fig. 16 6.1 - V
Ciss input capacitance - 9710 - pF
Coss output capacitance
VDS = 20 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 17 - 2042 - pF
NXP Semiconductors PSMN1R5-40PS
N-channel 40 V 1.6 mΩ standard level MOSFET in TO220
Symbol Parameter Conditions Min Typ Max Unit
Crss reverse transfercapacitance - 994 - pF
td(on) turn-on delay time - 45 - ns rise time - 66 - ns
td(off) turn-off delay time - 111 - ns fall time
VDS = 20 V; RL = 0.8 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; Tj = 25 °C 53 - ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 18 - 0.8 1.2 V
trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C 64 - ns recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 20 V; Tj = 25 °C 117 - nC
[1] Measured 3 mm from package.
003aaf316
200 15 30 45 60ID(A)fs(S)
Fig. 6. Forward transconductance as a function of
drain current; typical values
003aaf317 2 4 6VGS(V)D(A)j=25°CTj=175°C
Fig. 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values

Partno	Mfg	Dc	Qty	Available	Descript
PSMN1R5-40PS \|PSMN1R540PS	NXP/PH	N/a	10000	avai	N-channel 40 V 1.6 m鈩?standard level MOSFET in TO220