PSMN1R5-30BLE Fast Delivery |IC PHOENIX CO.,LIMITED

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PSMN1R5-30BLE
N-channel 30 V 1.5 m鈩?logic level MOSFET in D2PAK
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK12 October 2012 Product data sheet Product profile
1.1 General description
Logic level N-channel MOSFET in D2PAK package qualified to 175 °C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.
1.2 Features and benefits Enhanced forward biased safe operating area for superior linear mode operation• Very low Rdson for low conduction losses
1.3 Applications Electronic fuse• Hot swap• Load switch• Soft start
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 [1] - - 120 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 401 W
Static characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12 1.3 1.5 mΩRDSon drain-source on-stateresistance
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 12 1.7 1.85 mΩ
Dynamic characteristics
QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 15 V;
Fig. 14; Fig. 15 33.2 - nC
QG(tot) total gate charge VGS = 10 V; ID = 25 A; VDS = 15 V; 228 - nC
NXP Semiconductors PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
Symbol Parameter Conditions Min Typ Max Unit
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
source avalancheenergy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; unclamped; RGS = 50 Ω;
Fig. 3 - 1990 mJ
[1] Capped at 120A due to package Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate D drain[1] S source D mounting base; connected todrain 3
D2PAK (SOT404)
mbb076
[1] It is not possible to make connection to pin 2. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN1R5-30BLE D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads(one lead cropped) SOT404 Marking
Table 4. Marking codes
Type number Marking code
PSMN1R5-30BLE PSMN1R5-30BLE Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 30 V
VDGR drain-gate voltage Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ - 30 V
NXP Semiconductors PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
Symbol Parameter Conditions Min Max Unit
VGS gate-source voltage -20 20 V
VGS = 10 V; Tmb = 100 °C; Fig. 1 [1] - 120 AID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1 [1] - 120 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 1521 A
Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 401 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb = 25 °C [1] - 120 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1521 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; unclamped; RGS = 50 Ω;
Fig. 3 1990 mJ
[1] Capped at 120A due to package
003aaj351
400D(A)
(1)
Tmb(°C)0 20015050 100
03aa16
Pder(%)
Fig. 2. Normalized total power dissipation as afunction of mounting base temperature
NXP Semiconductors PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
003aaj35923-3 10-2 10-1 1 10tAL(ms)AL(A)
(1)
(2)
Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time
003aaj352234-1 1 10 102
VDS(V)D(A) LimitR DSon=VDS/ID
100µs
10msp=10µs
100msms
Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Max Unit 0.37 K/W - K/W
NXP Semiconductors PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
003aaj353
single shot
0.05-3-2-1-6 10-5 10-4 10-3 10-2 10-1 1tp(s)
Zth(j-mb)
(K/W)δ=0.5
0.02Tδ=
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - VV(BR)DSS drain-source
breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10
0.5 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 11; Fig. 10
1.3 1.7 2.15 V
VGS(th) gate-source thresholdvoltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10 - 2.45 V
VDS = 30 V; VGS = 0 V; Tj = 25 °C - 0.5 10 µAIDSS drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 100 °C - - 200 µA
VGS = 16 V; VDS = 0 V; Tj = 25 °C - 10 100 nAIGSS gate leakage current
VGS = -16 V; VDS = 0 V; Tj = 25 °C - 10 100 nA 1.5 mΩ 2.1 mΩ 1.85 mΩ 2.9 mΩ
NXP Semiconductors PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
Symbol Parameter Conditions Min Typ Max Unit internal gateresistance (AC) f = 1 MHz 0.5 1.1 2.2 Ω
Dynamic characteristics
ID = 25 A; VDS = 15 V; VGS = 10 V;
Fig. 14; Fig. 15 228 - nC
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
Fig. 14; Fig. 15 108 - nC
QG(tot) total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V - 210 - nC
QGS gate-source charge - 31.8 - nC
QGS(th) pre-threshold gate-source charge - 21.5 - nC
QGS(th-pl) post-threshold gate-source charge - 10.3 - nC
QGD gate-drain charge
ID = 25 A; VDS = 15 V; VGS = 4.5 V;
Fig. 14; Fig. 15 33.2 - nC
VGS(pl) gate-source plateau
voltage
ID = 25 A; VDS = 15 V; Fig. 14; Fig. 15 - 2.5 - V
Ciss input capacitance - 14934- pF
Coss output capacitance - 2741 - pF
Crss reverse transfer
capacitance
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16 1168 - pF
td(on) turn-on delay time - 100.6- ns rise time - 156.1- ns
td(off) turn-off delay time - 191.8- ns fall time
VDS = 15 V; RL = 0.6 Ω; VGS = 4.5 V;
RG(ext) = 4.7 Ω; Tj = 25 °C 99.2 - ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.78 1.2 V
trr reverse recovery time - 62.5 - ns recovered charge
IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V;
VDS = 15 V - 96.8 - nC
NXP Semiconductors PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
003aaj354 0.5 1 1.5VDS(V)D(A)GS(V)=2.2
Fig. 6. Output characteristics; drain current as a
function of drain-source voltage; typical values
003aaj355 4 8 12 16VGS(V)
RDSon(mΩ)
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aaj356
250 25 50 75 100ID(A)
gfs(S)
Fig. 8. Forward transconductance as a function ofdrain current; typical values
003aaj357
250 1 2 3 4VGS(V)
(A)=25°CTj=175°C
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values

Partno	Mfg	Dc	Qty	Available	Descript
PSMN1R5-30BLE \|PSMN1R530BLE	NXP/PH	N/a	10000	avai	N-channel 30 V 1.5 m鈩?logic level MOSFET in D2PAK