PSMN1R1-30PL Fast Delivery |IC PHOENIX CO.,LIMITED

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PSMN1R1-30PL
N-channel 30 V 1.3 m鈩?logic level MOSFET in TO-220
TO-220AB PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-2202 April 2014 Product data sheet General description
Logic level N-channel MOSFET in TO-220 package qualified to 175 °C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment. Features and benefits High efficiency due to low switching and conduction losses• Suitable for logic level gate drive sources Applications DC-to-DC converters• Load switiching• Motor control• Server power supplies Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 [1] - - 120 A
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 338 W junction temperature -55 - 175 °C
Static characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
[2] - 1.1 1.3 mΩRDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13 1.5 1.8 mΩ
Dynamic characteristics
QGD gate-drain charge - 37 - nC
QG(tot) total gate charge
VGS = 4.5 V; ID = 75 A; VDS = 15 V;
Fig. 14; Fig. 15 - 118 - nC
NXP Semiconductors PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
Symbol Parameter Conditions Min Typ Max Unit
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
source avalancheenergy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped - 1.9 J
[1] Continuous current is limited by package.[2] Measured 3 mm from package. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate D drain D mounting base; connected todrain2
TO-220AB (SOT78)
mbb076 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN1R1-30PL TO-220AB plastic single-ended package; heatsink mounted; 1 mountinghole; 3-lead TO-220AB SOT78 Marking
Table 4. Marking codes
Type number Marking code
PSMN1R1-30PL PSMN1R1-30PL
NXP Semiconductors PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220 Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 30 V
VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 30 V
VGS gate-source voltage -20 20 V
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 338 W
VGS = 10 V; Tmb = 100 °C; Fig. 2 [1] - 120 AID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - 120 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 1609 A
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb = 25 °C [1] - 120 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1609 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped 1.9 J
[1] Continuous current is limited by package.
NXP Semiconductors PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
Tmb(°C)0 20015050 100
03aa16
Pder(%)
Fig. 1. Normalized total power dissipation as a
function of mounting base temperature
003aaf774
500 50 100 150 200Tmb(C)
(A)
(1)
Fig. 2. Continuous drain current as a function ofmounting base temperature.
003aaf773-1234-1 1 10 102VDS(V)(A)
Limit RDSon=VDS/ID
100msms =10ms
100msms Max Unit 0.44 K/W
NXP Semiconductors PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistancefrom junction to
ambient
Vertical in free air - 60 - K/W
003aaf772-3-2-1-6 10-5 10-4 10-3 10-2 10-1 1tp(s)TTδ=
Zth(j-mb)(K/W)0.5
single shot
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
values
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - VV(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10; Fig. 11
1.3 1.7 2.2 V
ID = 2 mA; VDS = VGS; Tj = 175 °C;
Fig. 11
0.5 - - V
VGS(th) gate-source threshold
voltage 2.5 V 10 µA 500 µA 100 nA 100 nA 1.3 mΩ
NXP Semiconductors PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
Symbol Parameter Conditions Min Typ Max Unit
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 12 1.2 1.4 mΩ
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13; Fig. 12 2.1 2.5 mΩ
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13 1.5 1.8 mΩ gate resistance f = 1 MHz - 1.1 - Ω
Dynamic characteristics
ID = 75 A; VDS = 15 V; VGS = 10 V;
Fig. 14; Fig. 15 243 - nC
ID = 0 A; VDS = 0 V; VGS = 10 V;
Fig. 14; Fig. 15 223 - nC
QG(tot) total gate charge 118 - nC
QGS gate-source charge - 39 - nC
QGS(th) pre-threshold gate-
source charge 22 - nC
QGS(th-pl) post-threshold gate-
source charge 17 - nC
QGD gate-drain charge
ID = 75 A; VDS = 15 V; VGS = 4.5 V;
Fig. 14; Fig. 15 37 - nC
VGS(pl) gate-source plateau
voltage
VDS = 15 V; Fig. 14; Fig. 15 - 2.8 - V
Ciss input capacitance - 14850- pF
Coss output capacitance - 2799 - pF
Crss reverse transfercapacitance
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16 1215 - pF
td(on) turn-on delay time - 95 - ns rise time - 213 - ns
td(off) turn-off delay time - 199 - ns fall time
VDS = 15 V; RL = 0.2 Ω; VGS = 4.5 V;
RG(ext) = 5 Ω; ID = 75 A; Tj = 25 °C 115 - ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.8 1.2 V
trr reverse recovery time - 67 - ns recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 15 V - 123 - nC
[1] Measured 3 mm from package.
NXP Semiconductors PSMN1R1-30PL
N-channel 30 V 1.3 mΩ logic level MOSFET in TO-220
003aaf762
300 20 40 60 80ID(A)fs(S)
Fig. 5. Forward transconductance as a function of
drain current; typical values
003aaf763 0.6 1.2 1.8 2.4 3VGS(V)(A)j=25°CTj=175°C
Fig. 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
003aaf764 4 8 12 16VGS(V) DSon(mΩ)
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aad011
300 2 4 6 8 10VDS(V)
(A) 3.54.5
VGS(V)=2.4
Fig. 8. Output characteristics: drain current as a
function of drain-source voltage; typical values

Partno	Mfg	Dc	Qty	Available	Descript
PSMN1R1-30PL \|PSMN1R130PL	NXP/PH	N/a	10000	avai	N-channel 30 V 1.3 m鈩?logic level MOSFET in TO-220