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PSMN1R1-30EL
N-channel 30 V 1.3 m鈩?logic level MOSFET in I2PAK
PSMN1R1-30ELN-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK2 April 2014 Product data sheet General description
Logic level N-channel MOSFET in I2PAK package qualified to 175 °C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment. Features and benefits High efficiency due to low switching and conduction losses• Suitable for logic level gate drive sources Applications DC-to-DC converters• Load switiching• Motor control• Server power supplies Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 30 V drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 [1] - - 120 A
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 338 W junction temperature -55 - 175 °C
Static characteristics
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
[2] - 1.1 1.3 mΩRDSon drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13 1.5 1.8 mΩ
Dynamic characteristics
QGD gate-drain charge - 37 - nC
QG(tot) total gate charge
VGS = 4.5 V; ID = 75 A; VDS = 15 V;
Fig. 14; Fig. 15 - 118 - nC
NXP Semiconductors PSMN1R1-30EL
N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK
Symbol Parameter Conditions Min Typ Max Unit
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
source avalancheenergy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped - 1.9 J
[1] Continuous current is limited by package.[2] Measured 3 mm from package. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate D drain S source D mounting base; connected todrain21
I2PAK (SOT226)
mbb076 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN1R1-30EL I2PAK plastic single-ended package (I2PAK); TO-262 SOT226 Marking
Table 4. Marking codes
Type number Marking code
PSMN1R1-30EL PSMN1R1-30EL Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit - 30 V - 30 V
NXP Semiconductors PSMN1R1-30EL
N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK
Symbol Parameter Conditions Min Max Unit
VGS gate-source voltage -20 20 V
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 338 W
VGS = 10 V; Tmb = 100 °C; Fig. 2 [1] - 120 AID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - 120 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 1609 A
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb = 25 °C [1] - 120 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1609 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ≤ 30 V; RGS = 50 Ω; unclamped 1.9 J
[1] Continuous current is limited by package.
03aa16
Pder(%)
003aaf774
500 50 100 150 200Tmb(C)
(A)
(1)
Fig. 2. Continuous drain current as a function ofmounting base temperature.
NXP Semiconductors PSMN1R1-30EL
N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK
003aaf773-1234-1 1 10 102VDS(V)
(A)
Limit RDSon=VDS/ID
100msms =10ms
100msms
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistance
from junction tomounting base
Fig. 4 - 0.22 0.44 K/W
Rth(j-a) thermal resistance
from junction toambient
Vertical in free air - 60 - K/W
003aaf772-1 1T(K/W)0.5
NXP Semiconductors PSMN1R1-30EL
N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - VV(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 27 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10; Fig. 11
1.3 1.7 2.15 V
ID = 2 mA; VDS = VGS; Tj = 175 °C;
Fig. 11
0.5 - - V
VGS(th) gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 11 - 2.5 V
VDS = 30 V; VGS = 0 V; Tj = 25 °C - 0.02 10 µAIDSS drain leakage current
VDS = 30 V; VGS = 0 V; Tj = 175 °C - 250 500 µA
VGS = 16 V; VDS = 0 V; Tj = 25 °C - 10 100 nAIGSS gate leakage current
VGS = -16 V; VDS = 0 V; Tj = 25 °C - 10 100 nA
VGS = 10 V; ID = 25 A; Tj = 25 °C;
Fig. 12
[1] - 1.1 1.3 mΩ
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
Fig. 12 1.2 1.6 mΩ
VGS = 10 V; ID = 25 A; Tj = 175 °C;
Fig. 13; Fig. 12 2.1 2.5 mΩ
RDSon drain-source on-stateresistance
VGS = 10 V; ID = 25 A; Tj = 100 °C;
Fig. 13 1.5 1.8 mΩ gate resistance f = 1 MHz - 1.1 - Ω
Dynamic characteristics
ID = 75 A; VDS = 15 V; VGS = 10 V;
Fig. 14; Fig. 15 243 - nC
ID = 0 A; VDS = 0 V; VGS = 10 V;
Fig. 14; Fig. 15 222 - nC
QG(tot) total gate charge 118 - nC
QGS gate-source charge - 39 - nC
QGS(th) pre-threshold gate-
source charge 22 - nC
QGS(th-pl) post-threshold gate-source charge - 17 - nC
QGD gate-drain charge
ID = 75 A; VDS = 15 V; VGS = 4.5 V;
Fig. 14; Fig. 15 37 - nC
VGS(pl) gate-source plateau
voltage
VDS = 15 V; Fig. 14; Fig. 15 - 2.8 - V
NXP Semiconductors PSMN1R1-30EL
N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK
Symbol Parameter Conditions Min Typ Max Unit
Ciss input capacitance - 14850- pF
Coss output capacitance - 2799 - pF
Crss reverse transfercapacitance
VDS = 15 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16 1215 - pF
td(on) turn-on delay time - 95 - ns rise time - 213 - ns
td(off) turn-off delay time - 199 - ns fall time
VDS = 15 V; RL = 0.2 Ω; VGS = 4.5 V;
RG(ext) = 5 Ω; ID = 75 A; Tj = 25 °C 115 - ns
Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.8 1.2 V
trr reverse recovery time - 67 - ns recovered charge
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
VDS = 15 V - 123 - nC
[1] Measured 3 mm from package.
003aaf762
300 20 40 60 80ID(A)
gfs
(S)
Fig. 5. Forward transconductance as a function of
003aaf763 0.6 1.2 1.8 2.4 3VGS(V)D(A)j=25°CTj=175°C
Fig. 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values
NXP Semiconductors PSMN1R1-30EL
N-channel 30 V 1.3 mΩ logic level MOSFET in I2PAK
003aaf764 4 8 12 16VGS(V) DSon(mΩ)
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aad011
300 2 4 6 8 10VDS(V)
(A) 3.54.5
VGS(V)=2.4
Fig. 8. Output characteristics: drain current as a
function of drain-source voltage; typical values
003aaf766345-1 1 10 102VGS(V)(pF)issrss
Fig. 9. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
003aab271-6-5-4-3-2-1 1 2 3VGS(V)
(A)
maxtypmin
Fig. 10. Sub-threshold drain current as a function of
gate-source voltage

Partno	Mfg	Dc	Qty	Available	Descript
PSMN1R1-30EL \|PSMN1R130EL	NXP/PH	N/a	10000	avai	N-channel 30 V 1.3 m鈩?logic level MOSFET in I2PAK