PSMN165-200K ,N-channel enhancement mode field-effect transistorApplications■ DC to DC convertor■ Computer motherboards■ Switch mode power supplies.cc4. Pinning in ..
PSMN1R1-30EL ,N-channel 30 V 1.3 m鈩?logic level MOSFET in I2PAKApplicationsDC-to-DC converters•• Load switichingMotor control•• Server power supplies4. Quick refe ..
PSMN1R1-30PL ,N-channel 30 V 1.3 m鈩?logic level MOSFET in TO-220ApplicationsDC-to-DC converters•• Load switichingMotor control•• Server power supplies4. Quick refe ..
PSMN1R1-40BS ,N-channel 40 V 1.3 m鈩?standard level MOSFET in D2PAKApplications DC-to-DC convertors Motor control Load switching Server power supplies1.4 Quick re ..
PSMN1R3-30YL ,N-channel 30 V 1.3 m鈩?logic level MOSFET in LFPAKApplications DC-to-DC converters Motor control Lithium-ion battery protection Server power supp ..
PSMN1R5-30BLE ,N-channel 30 V 1.5 m鈩?logic level MOSFET in D2PAKApplications• Electronic fuseHot swap•• Load switchSoft start•1.4 Quick reference dataTable 1. Quic ..
QL4009-1PF100C , 9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4009-1PF100C , 9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4009-1PF100I , 9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4016-0PF144C , 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4016-0PF144C , 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4016-0PF144C , 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
PSMN165-200K
N-channel enhancement mode field-effect transistor
PSMN165-200KN-channel enhancement mode field-effect transistor
Rev. 01 — 16 January 2001 Product specification DescriptionSiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve
the lowest possible on-state resistance in a SOT96-1 (SO8) package.
Product availability:
PSMN165-200K in SOT96-1 (SO8).
Features Very low on-state resistance Fast switching TrenchMOS™ technology.
Applications DC to DC convertor Computer motherboards Switch mode power supplies.
Pinning information SiliconMAX is a trademark of Royal Philips Electronics. TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT96-1, simplified outline and symbol1,2,3 source (s)
SOT96-1 (SO8) gate (g)
5,6,7,8 drain (d)
Top view MBK187 s
MBB076
Philips Semiconductors PSMN165-200K
N-channel enhancement mode field-effect transistor Quick reference data Limiting values
Table 2: Quick reference dataVDS drain-source voltage (DC) Tj =25to150°C − 200 V drain current (DC) Tsp =80°C − 2.9 A
Ptot total power dissipation Tsp =80°C − 3.5 W junction temperature − 150 °C
RDSon drain-source on-state resistance VGS=10 V; ID= 2.5 A; Tj =25°C 130 165 mΩ
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) Tj =25to150°C − 200 V
VGS gate-source voltage (DC) −±20 V drain current (DC) Tsp =80 °C; Figure 2 and3 − 2.9 A
IDM peak drain current Tsp =25 °C; pulsed; tp≤10μs − 20 A
Ptot total power dissipation Tsp =80 °C; Figure1 − 3.5 W
Tstg storage temperature −55 +150 °C operating junction temperature −55 +150 °C
Source-drain diode source (diode forward) current (DC) Tsp =80°C − 3.1 A
ISM peak source (diode forward) current Tsp =25 °C; pulsed; tp≤10μs − 20 A
Philips Semiconductors PSMN165-200K
N-channel enhancement mode field-effect transistor
Philips Semiconductors PSMN165-200K
N-channel enhancement mode field-effect transistor Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-sp) thermal resistance from junction to solder
point
mounted on a metal clad substrate; Figure4 20 K/W
Philips Semiconductors PSMN165-200K
N-channel enhancement mode field-effect transistor Characteristics
Table 5: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown voltage ID= 250 μA; VGS =0V; Tj =25°C 200 240 − V
VGS(th) gate-source threshold voltage ID=1 mA; VDS =VGS; Figure9 =25 °C2 −4 V= 150°C 1.2 −− V= −55°C −− 6V
IDSS drain-source leakage current VDS= 160 V; VGS =0V; Tj =25°C −− 1 μA
VDS= 200 V; VGS =0V; Tj= 150°C −− 0.5 mA
IGSS gate-source leakage current VGS= ±20 V; VDS =0V −− 100 nA
RDSon drain-source on-state resistance VGS=10 V; ID= 2.5A; Figure 7 and8 =25°C − 130 165 mΩ= 150°C − 325 413 mΩ
Dynamic characteristicsgfs forward transconductance VDS =15V; ID= 2.9A; Figure11 − 10 − S
Qg(tot) total gate charge ID=3 A; VDD= 100 V; VGS =10V; Figure14 − 40 − nC
Qgs gate-source charge − 4.5 − nC
Qgd gate-drain (Miller) charge − 12 16.5 nC
Ciss input capacitance VGS =0V; VDS=25 V; f=1 MHz; Figure12 − 1330− pF
Coss output capacitance − 140 − pF
Crss reverse transfer capacitance − 70 − pF
td(on) turn-on delay time VDD= 100 V; RD= 100Ω;
VGS =10V;RG =6Ω 12 25 ns rise time − 11 25 ns
td(off) turn-off delay time − 50 80 ns fall time − 25 40 ns
Source-drain (reverse) diodeVSD source-drain (diode forward) voltageIS= 2.3 A; VGS =0V; Figure13 − 0.7 1.1 V
trr reverse recovery time IS= 2.9 A; dIS/dt= −100 A/μs; VGS =0V − 105 − ns recovery charge − 0.45 −μC
Philips Semiconductors PSMN165-200K
N-channel enhancement mode field-effect transistor
Philips Semiconductors PSMN165-200K
N-channel enhancement mode field-effect transistor
