PSMN085-150K ,N-channel TrenchMOS SiliconMAX standard level FETApplications Computer motherboards Switched-mode power supplies DC-to-DC convertors1.4 Quick ref ..
PSMN085-150K ,N-channel TrenchMOS SiliconMAX standard level FETGeneral descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FE ..
PSMN085-150K ,N-channel TrenchMOS SiliconMAX standard level FET
PSMN102-200Y ,N-channel TrenchMOS SiliconMAX standard level FETApplications Class D amplifier Motion control DC-to-DC converters Switched-mode power supplies1 ..
PSMN130-200D ,N-channel TrenchMOS(tm) transistorLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONS ..
PSMN165-200K ,N-channel enhancement mode field-effect transistorApplications■ DC to DC convertor■ Computer motherboards■ Switch mode power supplies.cc4. Pinning in ..
QL4009-1PF100C , 9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4009-1PF100C , 9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4009-1PF100I , 9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4016-0PF144C , 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4016-0PF144C , 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4016-0PF144C , 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
PSMN085-150K
N-channel TrenchMOS SiliconMAX standard level FET
Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits Low conduction losses due to low
on-state resistance Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications Computer motherboards DC-to-DC convertors Switched-mode power supplies
1.4 Quick reference data
PSMN085-150K
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 3 — 22 December 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 150°C - - 150 V drain current Tsp=80 °C; see Figure 1; see Figure 3 --3.5 A
Ptot total power dissipation Tsp=80 °C; see Figure 2 --3.5 W
Static characteristicsRDSon drain-source on-state
resistance
VGS =10V; ID= 3.5 A; Tj =25°C;
see Figure 9; see Figure 10 6785mΩ
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID= 4.1 A; VDS =75V; =25°C; see Figure 11 1217nC
NXP Semiconductors PSMN085-150K
N-channel TrenchMOS SiliconMAX standard level FET Pinning information Ordering information Limiting values
Table 2. Pinning information
Table 3. Ordering informationPSMN085-150K SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 150°C - 150 V
VGS gate-source voltage -20 20 V drain current Tsp=80 °C; see Figure 1; see Figure 3 -3.5 A
IDM peak drain current Tsp=25 °C; pulsed; tp≤10 µs; see Figure 3 -40 A
Ptot total power dissipation Tsp=80 °C; see Figure 2 -3.5 W
Tstg storage temperature -55 150 °C junction temperature -55 150 °C
Source-drain diode source current Tsp =80°C - 3.1 A
ISM peak source current Tsp=25 °C; pulsed; tp≤10µs - 40 A
NXP Semiconductors PSMN085-150K
N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors PSMN085-150K
N-channel TrenchMOS SiliconMAX standard level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-sp) thermal resistance from junction
to solder point
mounted on a metal clad substrate;
see Figure 4
--20 K/W
NXP Semiconductors PSMN085-150K
N-channel TrenchMOS SiliconMAX standard level FET Characteristics
Table 6. Characteristics
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 250 µA; VGS =0V; Tj=25°C 150 180 - V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =-55 °C;
see Figure 8
--6 V =1mA; VDS =VGS; Tj =25°C;
see Figure 8 4V =1mA; VDS =VGS; Tj =150 °C;
see Figure 8
1.2 --V
IDSS drain leakage current VDS =120 V; VGS =0V; Tj=25°C --1 µA
VDS =150 V; VGS =0V; Tj= 150°C --0.5 mA
IGSS gate leakage current VGS =20 V; VDS =0V; Tj=25°C - - 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - - 100 nA
RDSon drain-source on-state
resistance
VGS =10 V; ID= 3.5 A; Tj =150 °C;
see Figure 9; see Figure 10 161 204 mΩ
VGS =10 V; ID= 3.5 A; Tj =25°C;
see Figure 9; see Figure 10 6785mΩ
Dynamic characteristicsQG(tot) total gate charge ID= 4.1 A; VDS =75 V; VGS =10V; =25 °C; see Figure 11
-40 -nC
QGS gate-source charge - 4 - nC
QGD gate-drain charge - 12 17 nC
Ciss input capacitance VDS =25V; VGS =0V; f=1MHz; =25 °C; see Figure 12 1310 - pF
Coss output capacitance - 170 - pF
Crss reverse transfer capacitance - 80 - pF
td(on) turn-on delay time VDS =75V; RL =75 Ω; VGS =10V;
RG(ext) =6 Ω; Tj =25°C; ID =1A 1330ns rise time - 1730ns
td(off) turn-off delay time - 52 80 ns fall time - 30 45 ns
gfs transfer conductance VDS =15V; ID= 4.1 A; Tj =25°C;
see Figure 14
-14 -S
Source-drain diodeVSD source-drain voltage IS =2.3 A; VGS =0V; Tj =0 °C;
see Figure 13
-0.7 1.1 V
trr reverse recovery time IS =4.1 A; dIS/dt= -100 A/µs;
VGS =0V; VDS =25V; Tj =25°C 100 - ns recovered charge - 0.36 - µC
NXP Semiconductors PSMN085-150K
N-channel TrenchMOS SiliconMAX standard level FET
