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PSMN070-200P
N-channel TrenchMOS(tm) transistor
t))ifitzijzlfi\ (5iljxl E ET
PSMN076200B; PSMN070=200P
N-channel TrenchMOS(TM)
transistor
Product specification August 1999
Philips PPPPPPP
Semiconductors [(0llxl] l] Ul
Philips Semiconductors
Product specification
Siliconlt't ' Id
N-channel TrenchMOS(TM) transistor
PSMN070-200B; PSMN070-200P
FEATU RES
. Trench' technology
I Very low on-state resistance
. Fast switching
. Low thermal resistance
GENERAL DESCRIPTION
SYMBOL
QUICK REFERENCE DATA
Voss = 200 v
ID = 35 A
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
. d.c. to do. converters
. switched mode power supplies
The PSMN070-200P is supplied in the SOT78 (T0220AB) conventional leaded package.
The PSMN070-200B is supplied in the SOT404 surface mounting package.
PINNING SOT78 (TO220AB) SOT404 (D2PAK)
PIN DESCRIPTION b
tabg C) S ta
1 gate 7
2 drain1
3 source
tab drain 1 2 3 1 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Voss Drain-source voltage T = 25 ( to 175°C - 200 V
VDGR Drain-gate voltage f,, = 25 T to 175°C; Rss = 20 kn - 200 V
I/ss Gate-source voltage - i 20 V
lr, Continuous drain current Tmb = 25 ( - 35 A
Tmb = 100 "C - 25 A
lo,, Pulsed drain current Tmr, = 25 T - 140 A
Pr, Total power dissipation Tmt, = 25 T - 250 W
T], Tstg Operating junction and - 55 175 (
storage temperature
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999 2 Rev 1.000
