PSMN063-150D ,N-channel enhancement mode field-effect transistorApplications■ DC to DC converters ■ Switched mode power supplies1.4 Quick reference data■ V = 150 V ..
PSMN063-150D ,N-channel enhancement mode field-effect transistorPSMN063-150DN-channel enhancement mode field-effect transistorRev. 03 — 31 October 2001 Product data ..
PSMN063-150D ,N-channel enhancement mode field-effect transistor
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PSMN063-150D
N-channel enhancement mode field-effect transistor
PSMN063-150DN-channel enhancement mode field-effect transistor
Rev. 03 — 31 October 2001 Product data Product profile
1.1 DescriptionN-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS1 technology.
Product availability:
PSMN063-150D in SOT428 (D-PAK).
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information[1] It is not possible to make a connection to pin 2 of the SOT428 package. TrenchMOS™ is a trademark of Koninklijke Philips Electronics N.V. TrenchMOS™ technology � Very low on-state resistance Fast Switching � Low thermal resistance DC to DC converters � Switched mode power supplies VDS= 150V � ID =29A Ptot= 150W � RDSon≤63 mΩ
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol gate (g) drain (d) [1] source (s) connected to drain (d)
MBK091Top view
s
MBB076
Philips Semiconductors PSMN063-150D
N-channel enhancement mode field-effect transistor Limiting values
Table 2: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) Tj =25to175oC − 150 V
VDGR drain-gate voltage (DC) Tj =25to175oC; RGS =20kΩ− 150 V
VGS gate-source voltage (DC) −±20 V drain current (DC) Tmb =25 °C; VGS =10V;
Figure2 and3 29 A
Tmb= 100 °C; VGS =10V;
Figure2 and3 20 A
IDM peak drain current Tmb =25 °C; pulsed;tp≤10 μs;
Figure3 116 A
Ptot total power dissipation Tmb =25 °C; Figure1 − 150 W
Tstg storage temperature −55 +175 °C operating junction temperature −55 +175 °C
Source-drain diode source (diode forward) current (DC) Tmb =25°C − 29 A
ISM peak source (diode forward) current Tmb =25 °C; pulsed; tp≤10μs − 116 A
Avalanche ruggednessEAS non-repetitive avalanche energy unclamped inductive load; =26A;tp= 0.2 ms;
VDD≤25 V; RGS =50Ω;
VGS=10 V; startingTj =25°C 502 mJ
IAS non-repetitive avalanche current unclamped inductive load;
VDD≤25 V; RGS =50Ω;
VGS=10 V; startingTj =25°C 29 A
Philips Semiconductors PSMN063-150D
N-channel enhancement mode field-effect transistor
Philips Semiconductors PSMN063-150D
N-channel enhancement mode field-effect transistor Thermal characteristics
4.1 Transient thermal impedance
Table 3: Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting
base
Figure4 1.0 K/W
Rth(j-a) thermal resistance from junction to ambient Vertical in still air 50 K/W
Philips Semiconductors PSMN063-150D
N-channel enhancement mode field-effect transistor Characteristics
Table 4: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 250 μA; VGS =0V =25°C 150 −− V= −55°C 133 −− V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure9 =25 °C2 3 4 V= 175 °C1 −− V= −55°C −− 6V
IDSS drain-source leakage current VDS= 150 V; VGS =0V =25°C − 0.05 10 μA= 175°C −− 500 μA
IGSS gate-source leakage current VGS= ±10 V; VDS =0V − 0.02 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =15A;
Figure7 and8 =25°C − 60 63 mΩ= 175°C −− 176 mΩ
Dynamic characteristicsQg(tot) total gate charge ID=30 A; VDS= 120V;
VGS =10V; Figure14 55 − nC
Qgs gate-source charge − 10 − nC
Qgd gate-drain (Miller) charge − 20 27 nC
Ciss input capacitance VGS =0V; VDS = 25V;=1 MHz; Figure12 2390 − pF
Coss output capacitance − 240 − pF
Crss reverse transfer capacitance − 98 − pF
td(on) turn-on delay time VDD=75 V; RD= 2.7Ω;
VGS =10V; RG= 5.6Ω 14 − ns turn-on rise time − 50 − ns
td(off) turn-off delay time − 48 − ns turn-off fall time − 38 − ns
Source-drain diodeVSD source-drain (diode forward)
voltage=25 A; VGS =0V;
Figure13 0.9 1.2 V
trr reverse recovery time IS =20A;
dIS/dt= −100 A/μs;
VGS =0V; VDS =25V 105 − ns recovered charge − 0.55 −μC
Philips Semiconductors PSMN063-150D
N-channel enhancement mode field-effect transistor
