PSMN057-200P ,N-channel TrenchMOS(tm) transistor
PSMN057-200P ,N-channel TrenchMOS(tm) transistorELECTRICAL CHARACTERISTICST= 25˚C unless otherwise specifiedjSYMBOL PARAMETER CONDITIONS MIN. TYP. ..
PSMN057-200P ,N-channel TrenchMOS(tm) transistorLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONS ..
PSMN059-150Y ,N-channel TrenchMOS SiliconMAX standard level FETApplicationsClass D amplifier•• DC-to-DC convertersMotion control•• Switched-mode power supplies4. ..
PSMN063-150D ,N-channel enhancement mode field-effect transistorApplications■ DC to DC converters ■ Switched mode power supplies1.4 Quick reference data■ V = 150 V ..
PSMN063-150D ,N-channel enhancement mode field-effect transistorPSMN063-150DN-channel enhancement mode field-effect transistorRev. 03 — 31 October 2001 Product data ..
QL4009-1PF100C , 9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4009-1PF100C , 9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4009-1PF100I , 9,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4016-0PF144C , 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4016-0PF144C , 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
QL4016-0PF144C , 16,000 Usable PLD Gate QuickRAM ESP Combining Performance, Density and Embedded RAM
PSMN057-200P
N-channel TrenchMOS(tm) transistor
