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PSMN050-80BS
N-channel 80 V 46 m鈩?standard level MOSFET in D2PAK
Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
PSMN050-80BS
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK
Rev. 1 — 2 March 2012 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C --80 V drain current Tmb =25°C; VGS =10V; see Figure 1 --22 A
Ptot total power dissipation Tmb =25°C; see Figure 2 --56 W junction temperature -55 - 175 °C
Static characteristicsRDSon drain-source on-state resistance VGS =10V; ID =10A; Tj=25°C - 37 46 mΩ
Dynamic characteristicsQGD gate-drain charge VGS =10V; ID =25A; VDS =40V;
see Figure 14; see Figure 15
-2.3 -nC
QG(tot) total gate charge - 11 - nC
Avalanche ruggednessEDS(AL)S non-repetitive
drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =22A;
Vsup≤80 V; RGS =50 Ω; unclamped
--18 mJ
NXP Semiconductors PSMN050-80BS
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK Pinning information[1] It is not possible to make connection to pin 2.
Ordering information Limiting values
Table 2. Pinning information
Table 3. Ordering informationPSMN050-80BS D2PAK plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
SOT404
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 80 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -80 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -16 A
VGS =10V; Tmb =25°C; see Figure 1 -22 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C;
see Figure 3
-88 A
Ptot total power dissipation Tmb=25 °C;see Figure 2 -56 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C - 22 A
ISM peak source current pulsed; tp≤10 µs; Tmb =25°C - 88 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =22A;
Vsup≤80 V; RGS =50 Ω; unclamped
-18 mJ
NXP Semiconductors PSMN050-80BS
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK
NXP Semiconductors PSMN050-80BS
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 -2.2 2.7 K/W
Rth(j-a) thermal resistance from junction to
ambient
Minimum footprint; mounted on a
printed circuit board
-50 -K/W
NXP Semiconductors PSMN050-80BS
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK CharacteristicsTable 6. CharacteristicsTested to JEDEC standards where applicable.
Static characteristicsV(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj= -55°C 73 - - V =250 µA; VGS =0V; Tj=25°C 80 --V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj= 175 °C;
see Figure 11; see Figure 12 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 11; see Figure 12
--4.6 V =1mA; VDS =VGS; Tj =25°C;
see Figure 11; see Figure 12
234V
IDSS drain leakage current VDS =80V; VGS =0V; Tj=25°C --1 µA
VDS =80V; VGS =0V; Tj= 125°C --15 µA
IGSS gate leakage current VGS =-20 V; VDS =0V; Tj=25°C - - 100 nA
VGS =20V; VDS =0V; Tj=25°C - - 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =10A; Tj= 100 °C;
see Figure 13
--74 mΩ
VGS =10V; ID =10A; Tj=25°C - 37 46 mΩ internal gate resistance
(AC)
f=1MHz - 2 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =0A; VDS =0V; VGS=10V -9 -nC =25A; VDS =40V; VGS =10V;
see Figure 14; see Figure 15
-11 -nC
QGS gate-source charge - 3.8 - nC
QGS(th) pre-threshold
gate-source charge =25A; VDS =40V; VGS =10V;
see Figure 14
-1.9 -nC
QGS(th-pl) post-threshold
gate-source charge
-1.9 -nC
QGD gate-drain charge ID =25A; VDS =40V; VGS =10V;
see Figure 14; see Figure 15
-2.3 -nC
VGS(pl) gate-source plateau
voltage
VDS=40V -5.2 -V
Ciss input capacitance VDS =12V; VGS=0 V; f=1 MHz; =25°C; see Figure 17 633 - pF
Coss output capacitance - 100 - pF
Crss reverse transfer
capacitance
-50 -pF
td(on) turn-on delay time VDS =12V; RL =0.5 Ω; VGS =10V;
RG(ext) =4.7Ω
-9.2 -ns rise time - 1 - ns
td(off) turn-off delay time - 16 - ns fall time - 2.4 - ns
NXP Semiconductors PSMN050-80BS
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK
Source-drain diodeVSD source-drain voltage IS =15A; VGS =0V; Tj =25°C;
see Figure 16 0.86 1.2 V
trr reverse recovery time IS =50A; dIS/dt= 100 A/µs; VGS =0V;
VDS =40V
-32 -ns recovered charge - 28 - nC
Table 6. Characteristics …continuedTested to JEDEC standards where applicable.
NXP Semiconductors PSMN050-80BS
N-channel 80 V 46 mΩ standard level MOSFET in D2PAK