PSMN035-150B ,N-channel enhancement mode field-effect transistor
PSMN035-150B ,N-channel enhancement mode field-effect transistor
PSMN035-150B ,N-channel enhancement mode field-effect transistorApplications■ Switched mode power supplies.4. Pinning informationccTable 1: Pinning - SOT78 and SOT ..
PSMN035-150P ,N-channel enhancement mode field-effect transistorPSMN035-150B;PSMN035-150PN-channel enhancement mode field-effect transistorRev. 04 — 22 February 200 ..
PSMN035-150P ,N-channel enhancement mode field-effect transistor
PSMN035-150P ,N-channel enhancement mode field-effect transistor
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PSMN035-150B-PSMN035-150P
N-channel enhancement mode field-effect transistor
PSMN035-150B;
PSMN035-150PN-channel enhancement mode field-effect transistor
Rev. 04 — 22 February 2001 Product specification Description
SiliconMAX™1 products use the latest TrenchMOS™2 technology to achieve the
lowest possible on-state resistance for each package.
Product availability:
PSMN035-150P in SOT78 (TO-220AB)
PSMN035-150B in SOT404 (D2-P AK).
Features Fast switching Very low on-state resistance.
Applications Switched mode power supplies.
Pinning information[1] It is not possible to make connection to pin 2 of the SOT404 package. SiliconMAX is a trademark of Royal Philips Electronics. TrenchMOS is a trademark of Royal Philips Electronics.
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol gate (g)
SOT78 (TO-220AB) SOT404 (D2- PAK) drain (d) [1] source (s) mounting base;
connected to
drain (d)
MBK106
MBK116
MBB076
Philips Semiconductors PSMN035-150B; PSMN035-150P
N-channel enhancement mode field-effect transistor Quick reference data Limiting values
Table 2: Quick reference dataVDS drain-source voltage (DC) Tj =25to175°C − 150 V drain current (DC) Tmb =25 °C; VGS =10V − 50 A
Ptot total power dissipation Tmb =25°C − 250 W junction temperature − 175 °C
RDSon drain-source on-state resistance Tj =25 °C; VGS =10V; ID=25A 30 35 mΩ
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) Tj =25to175°C − 150 V
VDGR drain-gate voltage (DC) Tj =25to175 °C; RGS =20kΩ− 150 V
VGS gate-source voltage (DC) −±20 V drain current (DC) Tmb =25 °C; Figure 2 and3 − 50 A
Tmb= 100 °C; Figure 2 and3 − 36 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs;
Figure3 200 A
Ptot total power dissipation Tmb =25 °C; Figure1 − 250 W
Tstg storage temperature −55 +175 °C operating junction temperature −55 +175 °C
Source-drain diode source (diode forward) current
(DC)
Tmb =25°C − 50 A
ISM peak source (diode forward)
current
Tmb =25 °C; pulsed; tp≤10μs − 200 A
Avalanche ruggednessEAS non-repetitive avalanche energy unclamped inductive load;
IAS=47 A; tp= 0.1 ms; VDD≤50V;
RGS =50 Ω; VGS=10 V; starting =25 °C; Figure4 460 mJ
IAS non-repetitive avalanche current − 50 A
Philips Semiconductors PSMN035-150B; PSMN035-150P
N-channel enhancement mode field-effect transistor
Philips Semiconductors PSMN035-150B; PSMN035-150P
N-channel enhancement mode field-effect transistor Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting
base
Figure5 0.6 K/W
Rth(j-a) thermal resistance from junction to ambient SOT78 package; vertical in still air 60 K/W
SOT404 package; mounted on
printed circuit board; minimum
footprint. K/W
Philips Semiconductors PSMN035-150B; PSMN035-150P
N-channel enhancement mode field-effect transistor Characteristics
Table 5: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown
voltage= 250 μA; VGS =0V 150 −− V
VGS(th) gate-source threshold voltageID=1 mA; VDS =VGS;
Figure10 =25°C 2.0 3.0 4.0 V= 175°C 1.0 −− V
IDSS drain-source leakage current VGS =0V; VDS= 150V =25°C − 0.05 10 μA= 175°C −− 500 μA
IGSS gate-source leakage current VDS =0V; VGS= ±10V − 2 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =25A;
Figure8 and9 =25oC − 30 35 mΩ= 175°C −− 98 mΩ
Dynamic characteristicsQg(tot) total gate charge ID=50 A; VDS= 120V;
VGS =10V; Figure15 79 − nC
Qgs gate-source charge − 17 − nC
Qgd gate-drain (Miller) charge − 33 45 nC
Ciss input capacitance VGS =0V; VDS =25V;=1 MHz; Figure13 4720 − pF
Coss output capacitance − 456 − pF
Crss reverse transfer capacitance − 208 − pF
td(on) turn-on delay time VDD=75 V; RD= 1.5Ω;
VGS =10V; RG= 5.6Ω 25 − ns rise time − 138 − ns
td(off) turn-off delay time − 79 − ns fall time − 93 − ns
Source-drain diodeVSD source-drain (diode forward)
voltage=25 A; VGS =0V;
Figure14 0.85 1.2 V
trr reverse recovery time IS =20A;
dIS/dt= −100 A/μs;
VGS =0V; VR =30V 118 − ns recovered charge − 0.66 − nC
Philips Semiconductors PSMN035-150B; PSMN035-150P
N-channel enhancement mode field-effect transistor
Philips Semiconductors PSMN035-150B; PSMN035-150P
N-channel enhancement mode field-effect transistor
