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Partno	Mfg	Dc	Qty	Available	Descript
PSMN035-100LS |PSMN035100LS	NXP	N/a	1400	avai	N-channel DFN3333-8 100 V 32 m鈩?standard level MOSFET

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PSMN035-100LS
N-channel DFN3333-8 100 V 32 m鈩?standard level MOSFET
Product profile1.1 General description
Standard level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This
product is designed and qualified for use in a wide range of industrial, communications
and power supply equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Small footprint for compact designs Suitable for standard level gate drive
sources
1.3 Applications DC-to-DC converters Lithium-ion battery protection Load switching
1.4 Quick reference data
PSMN035-100LS
N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET
Rev. 3 — 12 December 2011 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj≥25 °C; Tj≤ 150°C - - 100 V drain current Tmb =25°C; VGS=10 V; see Figure 1 --27 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 --65 W junction temperature -55 - 150 °C
Static characteristics
RDSon drain-source on-state resistance VGS =10V; ID =10A; Tj =100 °C;
see Figure 12
--63 mΩ
VGS =10V; ID =10A; Tj =25°C;
see Figure 13 2932mΩ
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =15A; VDS =50V;
see Figure 14; see Figure 15 -nC
QG(tot) total gate charge - 23 - nC
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =27A;
Vsup≤ 100 V; unclamped; RGS =50Ω
--37 mJ
NXP Semiconductors PSMN035-100LS
N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET Pinning information Ordering information Limiting values
Table 2. Pinning information
Table 3. Ordering information
PSMN035-100LS DFN3333-8 plastic thermal enhanced very thin small outline package; no
leads; 8 terminals
SOT873-1
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 150°C - 100 V
VDGR drain-gate voltage Tj≤ 150 °C; Tj≥25 °C; RGS =20kΩ - 100 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -17 A
VGS =10V; Tmb =25°C; see Figure 1 -27 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C; see Figure 3 - 109 A
Ptot total power dissipation Tmb =25°C; see Figure 2 -65 W
Tstg storage temperature -55 150 °C junction temperature -55 150 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C - 27 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 109 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =27A;
Vsup≤ 100 V; unclamped; RGS =50Ω
-37 mJ
NXP Semiconductors PSMN035-100LS
N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET
NXP Semiconductors PSMN035-100LS
N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET Thermal characteristics
[1] Rth(j-a) is guaranteed by design and assumes that the device is mounted on a 40mm x 40mm x 70µm copper pad at 20°C ambient
temperature. In practice Rth(j-a) will be determined by the customer’s PCB characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 -1 1.3 K/W
Rth(j-a) thermal resistance from junction to ambient [1]- 5360K/W
NXP Semiconductors PSMN035-100LS
N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source breakdown voltageID =0.25mA; VGS =0V; Tj= -55°C 90 --V =0.25mA; VGS =0V; Tj=25°C 100 - - V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =150 °C;
see Figure 10 --V =1mA; VDS =VGS; Tj =25°C;
see Figure 10; see Figure 11
2.3 34V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10
--4.7 V
IDSS drain leakage current VDS= 100 V; VGS =0V; Tj= 125°C - - 50 µA
VDS= 100 V; VGS =0V; Tj=25°C - 0.1 2 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 10 100 nA
VGS =-20 V; VDS =0 V; Tj=25°C - 10 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =10A; Tj =100 °C;
see Figure 12
--63 mΩ
VGS =10V; ID =10A; Tj =150 °C;
see Figure 12 72.5 80 mΩ
VGS =10V; ID =10A; Tj =25°C;
see Figure 13 2932mΩ internal gate resistance (AC) f=1 MHz - 0.9 - Ω
Dynamic characteristics
QG(tot) total gate charge ID =15A; VDS =50V; VGS =10V;
see Figure 14; see Figure 15
-23 -nC =0A; VDS =0V; VGS =10V - 19 - nC
QGS gate-source charge ID =15A; VDS =50V; VGS =10V;
see Figure 14; see Figure 15
-5.7 -nC
QGS(th) pre-threshold gate-source
charge =15A; VDS =50V; VGS =10V;
see Figure 14
-3.7 -nC
QGS(th-pl) post-threshold gate-source
charge -nC
QGD gate-drain charge ID =15A; VDS =50V; VGS =10V;
see Figure 14; see Figure 15 -nC
VGS(pl) gate-source plateau voltage VDS =50V; see Figure 14;
see Figure 15
-4.6 -V
Ciss input capacitance VDS =50V; VGS =0V; f= 1MHz; =25 °C; see Figure 16 1350 - pF
Coss output capacitance - 96 - pF
Crss reverse transfer capacitance - 60 - pF
td(on) turn-on delay time VDS =50V; RL =3 Ω; VGS =10V;
RG(ext) =4.7 Ω; Tj =25°C
-11 -ns rise time -6 -ns
td(off) turn-off delay time - 22 - ns fall time -7 -ns
NXP Semiconductors PSMN035-100LS
N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET
Source-drain diode
VSD source-drain voltage IS =15 A; VGS =0V; Tj =25 °C;
see Figure 17 0.85 1.2 V
trr reverse recovery time IS =15 A; dIS/dt= 100 A/µs;
VGS =0V; VDS =50V
-52 -ns recovered charge - 102 - nC
Table 6. Characteristics …continued
NXP Semiconductors PSMN035-100LS
N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET

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