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PSMN027-100BS |PSMN027100BSNXP/PHN/a10000avaiN-channel 100V 26.8 m鈩?standard level MOSFET in D2PAK.


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PSMN027-100BS
N-channel 100V 26.8 m鈩?standard level MOSFET in D2PAK.
Product profile1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
PSMN027-100BS
N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK.
Rev. 2 — 1 March 2012 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 100 V drain current Tmb =25°C; VGS =10V; see Figure 1 --37 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - - 103 W junction temperature -55 - 175 °C
Static characteristics
RDSon drain-source on-state resistance VGS =10V; ID =15A; Tj= 100 °C; see Figure 12 --48 mΩ
VGS =10V; ID =15A; Tj =25°C;
see Figure 13 21 26.8 mΩ
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =30A; VDS =50V;
see Figure 14; see Figure 15 -nC
QG(tot) total gate charge - 30 - nC
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =37A;
Vsup≤ 100 V; unclamped; RGS =50Ω
--59 mJ
NXP Semiconductors PSMN027-100BS
N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK. Pinning information
[1] It is not possible to make connection to pin 2 Ordering information Limiting values
Table 2. Pinning information
Table 3. Ordering information
PSMN027-100BS D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 100 V
VDGR drain-gate voltage Tj≤ 175 °C; Tj≥25 °C; RGS =20kΩ - 100 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -26 A
VGS =10V; Tmb =25°C; see Figure 1 -37 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C;
see Figure 3 148 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 103 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C - 37 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 148 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =37A;
Vsup≤ 100 V; unclamped; RGS =50Ω
-59 mJ
NXP Semiconductors PSMN027-100BS
N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK.
NXP Semiconductors PSMN027-100BS
N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK. Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction to
mounting base
see Figure 4 - 0.8 1.46 K/W
Rth(j-a) thermal resistance from junction to
ambient
Minimum footprint; mounted on
a printed circuit board
-60 -K/W
NXP Semiconductors PSMN027-100BS
N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK. CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source breakdown
voltage= 0.25 mA; VGS =0V; Tj= -55°C 90 - - V= 0.25 mA; VGS =0V; Tj=25°C 100 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj= 175 °C;
see Figure 10 --V =1mA; VDS =VGS; Tj =25 °C;
see Figure 11; see Figure 10
234V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 10
--4.8 V
IDSS drain leakage current VDS =100 V; VGS =0V; Tj= 125°C --50 µA
VDS =100 V; VGS =0V; Tj=25°C - 0.08 2 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 10 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =15A; Tj= 100 °C;
see Figure 12
--48 mΩ
VGS =10V; ID =15A; Tj= 175 °C;
see Figure 12 5975mΩ
VGS =10V; ID =15A; Tj =25 °C;
see Figure 13 21 26.8 mΩ internal gate resistance (AC)f=1 MHz - 0.92 - Ω
Dynamic characteristics
QG(tot) total gate charge ID =30A; VDS =50V; VGS =10V;
see Figure 14; see Figure 15
-30 -nC =0A; VDS =0V; VGS =10V - 24 - nC
QGS gate-source charge ID =30A; VDS =50V; VGS =10V;
see Figure 14; see Figure 15 -nC
QGS(th) pre-threshold gate-source
charge =30A; VDS =50V; VGS =10V;
see Figure 14
-4.8 -nC
QGS(th-pl) post-threshold gate-source
charge
-3.4 -nC
QGD gate-drain charge ID =30A; VDS =50V; VGS =10V;
see Figure 14; see Figure 15 -nC
VGS(pl) gate-source plateau voltage VDS=50 V; see Figure 14;
see Figure 15
-4.9 -V
Ciss input capacitance VDS =50V; VGS=0 V; f=1 MHz; =25 °C; see Figure 16 1624 - pF
Coss output capacitance - 115 - pF
Crss reverse transfer capacitance - 74 - pF
td(on) turn-on delay time VDS =50V; RL =1.7 Ω; VGS =10V;
RG(ext) =4.7 Ω; Tj =25°C 14.4 - ns rise time - 11.4 - ns
td(off) turn-off delay time - 29.6 - ns fall time - 8.9 - ns
NXP Semiconductors PSMN027-100BS
N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK.
Source-drain diode
VSD source-drain voltage IS =15A; VGS =0V; Tj =25°C;
see Figure 17
-0.8 1.2 V
trr reverse recovery time IS =10A; dIS/dt= 100 A/µs; VGS =0V;
VDS =50V
-47 -ns recovered charge - 91 - nC
Table 6. Characteristics …continued
NXP Semiconductors PSMN027-100BS
N-channel 100V 26.8 mΩ standard level MOSFET in D2PAK.
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