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PSMN015-60PS
N-channel 60 V 14.8 m鈩?standard level MOSFET
Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
PSMN015-60PS
N-channel 60 V 14.8 mΩ standard level MOSFET
Rev. 3 — 23 June 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 60 V drain current Tmb =25 °C; VGS =10V; see Figure 1 --50 A
Ptot total power dissipation Tmb =25 °C; see Figure 2 --86 W junction temperature -55 - 175 °C
Static characteristicsRDSon drain-source on-state
resistance
VGS =10 V; ID =15A; =100 °C; see Figure 12
--23.7 mΩ
VGS =10 V; ID =15A; =25 °C; see Figure 13 12.6 14.8 mΩ
Dynamic characteristicsQGD gate-drain charge VGS =10 V; ID =25A; VDS=30 V; see Figure 14;
see Figure 15
-4.7 -nC
QG(tot) total gate charge - 20.9- nC
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10 V; Tj(init) =25°C; =50A; Vsup≤60V; RGS =50 Ω; unclamped
--44 mJ
NXP Semiconductors PSMN015-60PS
N-channel 60 V 14.8 mΩ standard level MOSFET Pinning information Ordering information
Table 2. Pinning information
Table 3. Ordering informationPSMN015-60PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
NXP Semiconductors PSMN015-60PS
N-channel 60 V 14.8 mΩ standard level MOSFET Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 60 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -60 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb =100 °C; see Figure 1 -36 A
VGS =10V; Tmb=25 °C; see Figure 1 -50 A
IDM peak drain current pulsed; tp≤10 µs; Tmb=25 °C; see Figure 3 - 201 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 -86 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C - 50 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 201 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25 °C; ID =50A;
Vsup≤60 V; RGS =50 Ω; unclamped
-44 mJ
NXP Semiconductors PSMN015-60PS
N-channel 60 V 14.8 mΩ standard level MOSFET
NXP Semiconductors PSMN015-60PS
N-channel 60 V 14.8 mΩ standard level MOSFET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting
base
see Figure 4 - 1 1.74 K/W
Rth(j-a) thermal resistance from junction to ambient vertical in free air - 60 - K/W
NXP Semiconductors PSMN015-60PS
N-channel 60 V 14.8 mΩ standard level MOSFET CharacteristicsTable 6. Characteristics
Static characteristicsV(BR)DSS drain-source breakdown
voltage =250 µA; VGS =0V; Tj= -55°C 54 - - V =250 µA; VGS =0V; Tj=25°C 60 --V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C;
see Figure 10; see Figure 11
234V
VGSth gate-source threshold voltage ID =1mA; VDS =VGS; Tj =-55 °C;
see Figure 11
--4.8 V =1mA; VDS =VGS; Tj= 175 °C;
see Figure 11 --V
IDSS drain leakage current VDS =60V; VGS =0V; Tj=25°C - 0.03 2 µA
VDS =60V; VGS =0V; Tj= 125°C --30 µA
IGSS gate leakage current VGS =20 V; VDS =0V; Tj=25°C - 10 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state
resistance
VGS =10 V; ID =15A; Tj= 175 °C;
see Figure 12 28.9 34 mΩ
VGS =10 V; ID =15A; Tj= 100 °C;
see Figure 12 - 23.7 mΩ
VGS =10 V; ID =15A; Tj =25°C;
see Figure 13 12.6 14.8 mΩ gate resistance f=1 MHz - 1.3 - Ω
Dynamic characteristicsQG(tot) total gate charge ID =25A; VDS =30V; VGS =10V;
see Figure 14; see Figure 15 20.9 - nC =0A; VDS =0V; VGS =10V - 17 - nC
QGS gate-source charge ID =25A; VDS =30V; VGS =10V;
see Figure 14; see Figure 15
-6.2 -nC
QGS(th) pre-threshold gate-source
charge =25A; VDS =30V; VGS =10V;
see Figure 14
-3.7 -nC
QGS(th-pl) post-threshold gate-source
charge
-2.4 -nC
QGD gate-drain charge ID =25A; VDS =30V; VGS =10V;
see Figure 14; see Figure 15
-4.7 -nC
VGS(pl) gate-source plateau voltage VDS =30V; see Figure 14;
see Figure 15
-4.8 -V
Ciss input capacitance VDS =30V; VGS=0 V; f=1 MHz; =25°C; see Figure 16 1220 - pF
Coss output capacitance - 169 - pF
Crss reverse transfer capacitance - 95 - pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V;
RG(ext) =4.7Ω
-12 -ns rise time - 13 - ns
td(off) turn-off delay time - 27 - ns fall time -7 -ns
NXP Semiconductors PSMN015-60PS
N-channel 60 V 14.8 mΩ standard level MOSFET
Source-drain diodeVSD source-drain voltage IS =15A; VGS =0V; Tj =25°C - 0.8 1.2 V
trr reverse recovery time IS =25A; dIS/dt= -100 A/µs;
VGS =0 V; VDS =30V
-31 -ns recovered charge - 28.5 - nC
Table 6. Characteristics …continued
