Home ›  P › P31 > PSMN015-60BS,N-channel 60 V 14.8 m鈩?standard level MOSFET in D2PAK

PSMN015-60BS Fast Delivery,Good Price
Part Number:

If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email

Partno	Mfg	Dc	Qty	Available	Descript
PSMN015-60BS |PSMN01560BS	NXP/PH	N/a	10000	avai	N-channel 60 V 14.8 m鈩?standard level MOSFET in D2PAK

PSMN015-60BS ,N-channel 60 V 14.8 m鈩?standard level MOSFET in D2PAKApplications DC-to-DC converters Motor control Load switching Server power supplies1.4 Quick re ..
PSMN015-60PS ,N-channel 60 V 14.8 m鈩?standard level MOSFETApplications DC-to-DC converters Motor control Load switching Server power supplies1.4 Quick re ..
PSMN015-60PS ,N-channel 60 V 14.8 m鈩?standard level MOSFETGeneral descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 °C. This produ ..
PSMN016-100BS ,N-channel 100V 16 m鈩?standard level MOSFET in D2PAKApplications DC-to-DC converters Motor control Load switching Server power supplies1.4 Quick re ..
PSMN016-100PS ,N-channel 100V 16 m鈩?standard level MOSFET in TO-220Applications DC-to-DC converters Motor control Load switching Server power supplies1.4 Quick re ..
PSMN016-100PS ,N-channel 100V 16 m鈩?standard level MOSFET in TO-220General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This prod ..
QL3025-1PQ208C , 25,000 Usable PLD Gate pASIC 3 FPGA Combining High Performance and High Density
QL3025-1PQ208I , 25,000 Usable PLD Gate pASIC 3 FPGA Combining High Performance and High Density
QL3025-2PF144C , 25,000 Usable PLD Gate pASIC 3 FPGA Combining High Performance and High Density
QL3025-2PF144C , 25,000 Usable PLD Gate pASIC 3 FPGA Combining High Performance and High Density
QL3025-2PQ208C , 25,000 Usable PLD Gate pASIC 3 FPGA Combining High Performance and High Density
QL3025-3PF144C , 25,000 Usable PLD Gate pASIC 3 FPGA Combining High Performance and High Density

---

PSMN015-60BS
N-channel 60 V 14.8 m鈩?standard level MOSFET in D2PAK
Product profile1.1 General description
Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits High efficiency due to low switching
and conduction losses Suitable for standard level gate drive
sources
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
PSMN015-60BS
N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK
Rev. 2 — 1 March 2012 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 60 V drain current Tmb =25°C; VGS=10 V; see Figure 1 --50 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 --86 W junction temperature -55 - 175 °C
Static characteristics
RDSon drain-source on-state resistance VGS =10V; ID =15A; Tj =100 °C; see Figure 12 - - 23.7 mΩ
VGS =10V; ID =15A; Tj =25°C;
see Figure 13 12.6 14.8 mΩ
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =25A; VDS =30V;
see Figure 14; see Figure 15
-4.7 -nC
QG(tot) total gate charge - 20.9 - nC
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =50A;
Vsup≤60 V; RGS =50 Ω; unclamped
--44 mJ
NXP Semiconductors PSMN015-60BS
N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK Pinning information
[1] It is not possible to make connection to pin 2 Ordering information Limiting values
Table 2. Pinning information
Table 3. Ordering information
PSMN015-60BS D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 60 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 175 °C; RGS =20kΩ -60 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 -36 A
VGS =10V; Tmb=25 °C; see Figure 1 -50 A
IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C;
see Figure 3 201 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 -86 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C - 50 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 201 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =50A;
Vsup≤60 V; RGS =50 Ω; unclamped
-44 mJ
NXP Semiconductors PSMN015-60BS
N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK
NXP Semiconductors PSMN015-60BS
N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction to mounting
base
see Figure 4 - 1 1.74 K/W
Rth(j-a) thermal resistance from junction to ambient Minimum footprint; mounted
on a printed circuit board
-60 -K/W
NXP Semiconductors PSMN015-60BS
N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source breakdown
voltage= 250 µA; VGS =0 V; Tj= -55°C 54 --V= 250 µA; VGS =0 V; Tj=25°C 60 --V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj =25°C;
see Figure 10; see Figure 11
234V
VGSth gate-source threshold voltage ID =1mA; VDS =VGS; Tj =-55 °C;
see Figure 11
--4.8 V =1mA; VDS =VGS; Tj =175 °C;
see Figure 11 --V
IDSS drain leakage current VDS =60V; VGS =0V; Tj=25°C - 0.03 2 µA
VDS =60V; VGS =0V; Tj= 125°C - - 30 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 10 100 nA
VGS =-20 V; VDS =0 V; Tj=25°C - 10 100 nA
RDSon drain-source on-state
resistance
VGS =10V; ID =15A; Tj =175 °C;
see Figure 12 28.9 34 mΩ
VGS =10V; ID =15A; Tj =100 °C;
see Figure 12 - 23.7 mΩ
VGS =10V; ID =15A; Tj =25°C;
see Figure 13 12.6 14.8 mΩ gate resistance f=1 MHz - 1.3 - Ω
Dynamic characteristics
QG(tot) total gate charge ID =25A; VDS =30V; VGS =10V;
see Figure 14; see Figure 15 20.9 - nC =0A; VDS =0V; VGS =10V - 17 - nC
QGS gate-source charge ID =25A; VDS =30V; VGS =10V;
see Figure 14; see Figure 15
-6.2 -nC
QGS(th) pre-threshold gate-source
charge =25A; VDS =30V; VGS =10V;
see Figure 14
-3.7 -nC
QGS(th-pl) post-threshold gate-source
charge
-2.4 -nC
QGD gate-drain charge ID =25A; VDS =30V; VGS =10V;
see Figure 14; see Figure 15
-4.7 -nC
VGS(pl) gate-source plateau voltage VDS=30 V; see Figure 14;
see Figure 15
-4.8 -V
Ciss input capacitance VDS =30V; VGS =0V; f= 1MHz; =25 °C; see Figure 16 1220 - pF
Coss output capacitance - 169 - pF
Crss reverse transfer capacitance - 95 - pF
td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V;
RG(ext) =4.7Ω
-12 -ns rise time - 13 - ns
td(off) turn-off delay time - 27 - ns fall time - 7 - ns
NXP Semiconductors PSMN015-60BS
N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK
Source-drain diode
VSD source-drain voltage IS =15A; VGS =0V; Tj =25°C - 0.8 1.2 V
trr reverse recovery time IS =25A; dIS/dt= -100 A/µs;
VGS =0V; VDS =30V
-31 -ns recovered charge - 28.5 - nC
Table 6. Characteristics …continued
NXP Semiconductors PSMN015-60BS
N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK

TEL:86-533-2716050      FAX:86-533-2716790     ©2020 IC PHOENIX CO.,LIMITED