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PSMN015-110P
PSMN015-110P; Trenchmos (tm) Standard level FET
PSMN015-110P renchMOS™ Standard level FET
Rev. 01 — 08 January 2004 Product data Product profile
1.1 DescriptionSiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve
the lowest possible on-state resistance in each package.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information Low on-state resistance � Low gate charge. DC-to-DC converters � Switched-mode power supplies. VDS≤ 110V � ID≤75A Ptot≤ 300W � RDSon≤15 mΩ
Table 1: Pinning - SOT78, simplified outlines and symbol gate (g)
SOT78 (TO-220AB) drain (d) source (s) mounting base;
connected to drain (d)
MBK106
MBB076
Philips Semiconductors PSMN015-110P
TrenchMOS™ Standard level FET Ordering information Limiting values
Table 2: Ordering informationPSMN015-110P TO-220AB Plastic single-ended package; heatsink mounted;1 mounting hole;3 leads SOT78
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) 25°C≤Tj≤ 175°C - 110 V
VDGR drain-gate voltage (DC) 25°C≤Tj≤ 175 °C; RGS =20kΩ - 110 V
VGS gate-source voltage (DC) - ±20 V drain current (DC) Tmb =25 °C; VGS =10V; Figure2 and3 -75 A
Tmb= 100 °C; VGS =10V; Figure2 - 60.8 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs; Figure3 - 240 A
Ptot total power dissipation Tmb =25 °C; Figure1 - 300 W
Tstg storage temperature −55 +175 °C junction temperature −55 +175 °C
Source-drain diode source (diode forward) current (DC) Tmb =25°C - 75 A
ISM peak source (diode forward) current Tmb =25 °C; pulsed; tp≤10μs - 240 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID =36A;= 0.11 ms; VDD≤50 V; RGS =50Ω;
VGS=10 V; startingTj =25°C 320 mJ
Philips Semiconductors PSMN015-110P
TrenchMOS™ Standard level FET
Philips Semiconductors PSMN015-110P
TrenchMOS™ Standard level FET Thermal characteristics
5.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting base Figure4 - - 0.5 K/W
Rth(j-a) thermal resistance from junction to ambient vertical in still air - 60 - K/W
Philips Semiconductors PSMN015-110P
TrenchMOS™ Standard level FET Characteristics
Table 5: Characteristics =25 °C unless otherwise specified
Static characteristicsV(BR)DSS drain-source breakdown voltage ID= 250 μA; VGS =0V =25°C 110 - - V= −55°C 99 --V
VGS(th) gate-source threshold voltage ID=1 mA; VDS =VGS; Figure9 =25°C 234V= 175°C 1 --V= −55°C - - 4.4 V
IDSS drain-source leakage current VDS= 100 V; VGS =0V =25°C - 0.05 10 μA= 175°C - - 500 μA
IGSS gate-source leakage current VGS= ±20 V; VDS=0V - 2 100 nA
RDSon drain-source on-state resistance VGS=10 V; ID =25A; Figure7 and8 =25°C - 12 15 mΩ= 175°C - 32.4 40.5 mΩ
Dynamic characteristicsQg(tot) total gate charge ID=75 A; VDD =80V; VGS =10V; Figure13 -90 - nC
Qgs gate-source charge - 20 - nC
Qgd gate-drain (Miller) charge - 35 - nC
Ciss input capacitance VGS =0V; VDS= 25 V; f=1 MHz; Figure11 -4900 -pF
Coss output capacitance - 390 - pF
Crss reverse transfer capacitance - 220 - pF
td(on) turn-on delay time VDD =50V; RL= 1.8Ω;
VGS =10V;RG= 5.6Ω
-25 - ns rise time -65 - ns
td(off) turn-off delay time - 95 - ns fall time -50 - ns
Source-drain diodeVSD source-drain (diode forward) voltageIS=25 A; VGS =0V; Figure12 - 0.8 1.1 V
trr reverse recovery time IS=20 A; dIS/dt= −100 A/μs; VGS =0V - 80 - ns recovered charge - 115 - nC
Philips Semiconductors PSMN015-110P
TrenchMOS™ Standard level FET
