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PSMN013-100ES |PSMN013100ESNXP/PHN/a10000avaiN-channel 100V 13.9m鈩?standard level MOSFET in I2PAK.


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PSMN013-100ES
N-channel 100V 13.9m鈩?standard level MOSFET in I2PAK.
Product profile1.1 General description
Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C.
This product is designed and qualified for use in a wide range of industrial,
communications and domestic equipment.
1.2 Features and benefits Low conduction losses due to low
on-state resistance Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies
1.4 Quick reference data
PSMN013-100ES
N-channel 100V 13.9mΩ standard level MOSFET in I2PAK.
Rev. 3 — 29 September 2011 Product data sheet
Table 1. Quick reference data
VDS drain-source
voltage≥25 °C; Tj≤ 175°C - - 100 V drain current Tmb =25°C; VGS =10V;
see Figure 1
[1] --68 A
Ptot total power
dissipation
Tmb=25 °C; see Figure 2 --170 W junction
temperature
-55 - 175 °C
Static characteristics
RDSon drain-source
on-state
resistance
VGS =10V; ID =15A; = 100 °C; see Figure 11
--25 mΩ
VGS =10V; ID =15A; Tj =25°C;
see Figure 12; see Figure 11
[2] -11 13.9 mΩ
Dynamic characteristics
QGD gate-drain charge VGS =10V; ID =25A;
VDS =50 V; see Figure 14;
see Figure 13
-17 -nC
NXP Semiconductors PSMN013-100ES
N-channel 100V 13.9mΩ standard level MOSFET in I2PAK.
[1] Continuous current is limited by package.
[2] Measured 3 mm from package. Pinning information Ordering information
QG(tot) total gate charge VGS =10V; ID =25A;
VDS =50 V; see Figure 13;
see Figure 14
-59 -nC
Avalanche ruggedness
EDS(AL)S non-repetitive
drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; =68A; Vsup≤ 100V;
unclamped; RGS =50Ω
--127 mJ
Table 1. Quick reference data …continued
Table 2. Pinning information
Table 3. Ordering information
PSMN013-100ES I2PAK plastic single-ended package (I2PAK); TO-262 SOT226
NXP Semiconductors PSMN013-100ES
N-channel 100V 13.9mΩ standard level MOSFET in I2PAK. Limiting values
[1] Continuous current is limited by package.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 100 V
VDGR drain-gate voltage Tj≤ 175 °C; Tj≥25 °C; RGS =20kΩ - 100 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb= 100 °C; see Figure 1 [1] -47 A
VGS =10V; Tmb =25°C; see Figure 1 [1] -68 A
IDM peak drain current pulsed; tp≤10 µs; Tmb=25°C - 272 A
Ptot total power dissipation Tmb =25°C; see Figure 2 - 170 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb =25°C [1] -68 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 272 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =68A;
Vsup≤ 100 V; unclamped; RGS =50Ω 127 mJ
NXP Semiconductors PSMN013-100ES
N-channel 100V 13.9mΩ standard level MOSFET in I2PAK. Thermal characteristics
Table 5. Thermal characteristics
Rth(j-mb) thermal resistance from junction to mounting base see Figure 3 -0.5 0.9 K/W
Rth(j-a) thermal resistance from junction to ambient vertical in free air - 60 - K/W
NXP Semiconductors PSMN013-100ES
N-channel 100V 13.9mΩ standard level MOSFET in I2PAK. CharacteristicsTable 6. Characteristics
Static characteristics
V(BR)DSS drain-source breakdown voltageID= 0.25 mA; VGS =0V; Tj= -55°C 90 - - V= 0.25 mA; VGS =0V; Tj=25°C 100 - - V
VGS(th) gate-source threshold voltage ID =1 mA; VDS =VGS; Tj =175 °C;
see Figure 9 --V =1 mA; VDS =VGS; Tj =25°C;
see Figure 10; see Figure 9
234V =1 mA; VDS =VGS; Tj =-55 °C;
see Figure 10
--4.8 V
IDSS drain leakage current VDS= 100 V; VGS =0V; Tj= 125°C - - 100 µA
VDS= 100 V; VGS =0V; Tj=25°C - 0.06 2 µA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - 10 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state resistance VGS =10V; ID =15 A; Tj =175 °C;
see Figure 11 30 38.9 mΩ
VGS =10V; ID =15 A; Tj =100 °C;
see Figure 11
--25 mΩ
VGS =10V; ID =15 A; Tj =25 °C;
see Figure 12; see Figure 11
[1]- 11 13.9 mΩ internal gate resistance (AC) f=1 MHz - 1 - Ω
Dynamic characteristics
QG(tot) total gate charge ID =25 A; VDS =50V; VGS =10V;
see Figure 13; see Figure 14
-59 -nC =0 A; VDS =0 V; VGS=10V - 47.6 - nC
QGS gate-source charge ID =25 A; VDS =50V; VGS =10V;
see Figure 13; see Figure 14 13.8 - nC
QGS(th) pre-threshold gate-source
charge =25 A; VDS =50V; VGS =10V;
see Figure 14
-9.2 -nC
QGS(th-pl) post-threshold gate-source
charge
-4.6 -nC
QGD gate-drain charge ID =25 A; VDS =50V; VGS =10V;
see Figure 14; see Figure 13
-17 -nC
VGS(pl) gate-source plateau voltage VDS=50 V; see Figure 14;
see Figure 13
-4.4 -V
Ciss input capacitance VDS =50V; VGS=0 V; f=1 MHz; =25 °C; see Figure 15 3195 - pF
Coss output capacitance - 221 - pF
Crss reverse transfer capacitance - 136 - pF
td(on) turn-on delay time VDS =50V; RL =2 Ω; VGS =10V;
RG(ext) =4.7 Ω; Tj =25°C 20.7 - ns rise time - 25 - ns
td(off) turn-off delay time - 52.5 - ns fall time - 24 - ns
NXP Semiconductors PSMN013-100ES
N-channel 100V 13.9mΩ standard level MOSFET in I2PAK.
[1] Measured 3 mm from package.
Source-drain diode
VSD source-drain voltage IS =15A; VGS =0V; Tj =25°C;
see Figure 16
-0.8 1.2 V
trr reverse recovery time IS =25A; dIS/dt= 100 A/µs;
VGS =0V; VDS =50V
-52 -ns recovered charge - 109 - nC
Table 6. Characteristics …continued
NXP Semiconductors PSMN013-100ES
N-channel 100V 13.9mΩ standard level MOSFET in I2PAK.
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