PSMN013-100BS Fast Delivery |IC PHOENIX CO.,LIMITED

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PSMN013-100BS
N-channel 100V 13.9m鈩?standard level MOSFET in D2PAK
PSMN013-100BSN-channel 100V 13.9mΩ standard level MOSFET in D2PAK21 February 2014 Product data sheet General description
Standard level N-channel MOSFET in D2PAK package qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment. Features and benefits High efficiency due to low switching and conduction losses• Suitable for standard level gate drive Applications DC-to-DC converters• Load switching• Motor control• Server power supplies Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 100 V drain current Tmb = 25 °C; VGS = 10 V; Fig. 2 [1] - - 68 A
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 170 W junction temperature -55 - 175 °C
Static characteristics
VGS = 10 V; ID = 15 A; Tj = 100 °C;
Fig. 12; Fig. 13 19.4 25 mΩRDSon drain-source on-state
resistance
VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 13 10.8 13.9 mΩ
Dynamic characteristics
QGD gate-drain charge VGS = 10 V; ID = 25 A; VDS = 50 V;
Fig. 15; Fig. 14 17 23.8 nC 59 83 nC
NXP Semiconductors PSMN013-100BS
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
Symbol Parameter Conditions Min Typ Max Unit
Avalanche ruggedness
EDS(AL)S non-repetitive drain-
source avalancheenergy
VGS = 10 V; Tj(init) = 25 °C; ID = 68 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω - 127 mJ
[1] Continuous current is limited by package Pinning information
Table 2. Pinning information G gate D drain[1] S source D mounting base; connected to
drain 3
D2PAK (SOT404)
mbb076
[1] It is not possible to make connection to pin 2. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PSMN013-100BS D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404 Marking
Table 4. Marking codes
Type number Marking code
PSMN013-100BS PSMN013-100BS Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 100 V
VDGR drain-gate voltage Tj ≤ 175 °C; Tj ≥ 25 °C; RGS = 20 kΩ - 100 V
NXP Semiconductors PSMN013-100BS
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
Symbol Parameter Conditions Min Max Unit
VGS gate-source voltage -20 20 V
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 170 W
VGS = 10 V; Tmb = 100 °C; Fig. 2 [1] - 47 AID drain current
VGS = 10 V; Tmb = 25 °C; Fig. 2 [1] - 68 A
IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 272 A
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
Tsld(M) peak soldering temperature - 260 °C
Source-drain diode source current Tmb = 25 °C [1] - 68 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 272 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 68 A;
Vsup ≤ 100 V; unclamped; RGS = 50 Ω 127 mJ
[1] Continuous current is limited by package
03aa16
Pder(%)
003aac512 50 100 150 200Tmb (°C)
(A)
Fig. 2. Continuous drain current as a function of
mounting base temperature
NXP Semiconductors PSMN013-100BS
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
003aae168
10-123 10 102 103VDS(V)
(A) Limit RDSon= VDS/IDms1ms
tp=10µs
100µs
100ms
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistancefrom junction to
mounting base
Fig. 4 - 0.5 0.9 K/W
Rth(j-a) thermal resistancefrom junction to
ambient
minimum footprint; mounted on aprinted-circuit board - 50 - K/W
003aad575-1 10
Zth (j-mb)(K/W)
0.20.5
NXP Semiconductors PSMN013-100BS
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 90 - - VV(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 100 - - V
ID = 1 mA; VDS = VGS; Tj = 175 °C;
Fig. 10 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C;
Fig. 10; Fig. 11 3 4 V
VGS(th) gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10 - 4.6 V
VDS = 100 V; VGS = 0 V; Tj = 125 °C - - 100 µAIDSS drain leakage current
VDS = 100 V; VGS = 0 V; Tj = 25 °C - 0.06 2 µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nAIGSS gate leakage current
VGS = -20 V; VDS = 0 V; Tj = 25 °C - 10 100 nA
VGS = 10 V; ID = 15 A; Tj = 100 °C;
Fig. 12; Fig. 13 19.4 25 mΩ
VGS = 10 V; ID = 15 A; Tj = 175 °C;
Fig. 12; Fig. 13 29.5 38.9 mΩ
RDSon drain-source on-stateresistance
VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 13 10.8 13.9 mΩ gate resistance f = 1 MHz 0.5 1 2 Ω
Dynamic characteristics
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15 59 83 nCQG(tot) total gate charge
ID = 0 A; VDS = 0 V; VGS = 10 V - 47.6 66.7 nC
QGS gate-source charge ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 14; Fig. 15 13.8 19.4 nC
QGS(th) pre-threshold gate-source charge - 9.2 - nC
QGS(th-pl) post-threshold gate-
source charge 4.6 - nC
QGD gate-drain charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
Fig. 15; Fig. 14 17 23.8 nC
VGS(pl) gate-source plateauvoltage VDS = 50 V; Fig. 15; Fig. 14 - 4.4 - V
Ciss input capacitance - 3195 4315 pF
Coss output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; Fig. 16 - 221 300 pF
NXP Semiconductors PSMN013-100BS
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
Symbol Parameter Conditions Min Typ Max Unit
Crss reverse transfercapacitance - 136 191 pF
td(on) turn-on delay time - 20.7 31.1 ns rise time - 25 37.5 ns
td(off) turn-off delay time - 52.5 78.8 ns fall time
VDS = 50 V; RL = 2 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; Tj = 25 °C 24 36 ns
Source-drain diode
VSD source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.85 1.2 V
trr reverse recovery time - 52 68 ns recovered charge
IS = 25 A; dIS/dt = 100 A/µs; VGS = 0 V;
VDS = 50 V - 109 142 nC
003aad577
200 1 2 3 4VDS(V)(A) 6
VGS(V)=4
Fig. 5. Output characteristics: drain current as a function of drain-source voltage; typical values
003aad580
5000 2 4 6 8 10VGS(V)(pF)
Ciss
Crss
Fig. 6. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
NXP Semiconductors PSMN013-100BS
N-channel 100V 13.9mΩ standard level MOSFET in D2PAK
003aad585 8 12 16 20VGS(V)
RDSon
(mΩ)
Fig. 7. Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aad586
150 30 60 90 120 150ID(A)
gfs
(S)
Fig. 8. Forward transconductance as a function of
drain current; typical values
003aad582
100 2 4 6VGS(V)
(A)
Tj= 175°C
25°C
Fig. 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values (°C)-60 1801200 60
003aad280
VGS(th)(V)
max
typ
min
Fig. 10. Gate-source threshold voltage as a function ofjunction temperature

Partno	Mfg	Dc	Qty	Available	Descript
PSMN013-100BS \|PSMN013100BS	NXP/PH	N/a	10000	avai	N-channel 100V 13.9m鈩?standard level MOSFET in D2PAK