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PSMN009-100B-PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET
Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits Low conduction losses due to low
on-state resistance Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications High frequency computer motherboard
DC-to-DC convertors OR-ing applicationss
1.4 Quick reference data
PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 4 — 27 December 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - - 100 V drain current Tmb =25 °C; VGS =10 V; see Figure 1;
see Figure 3
--75 A
Ptot total power dissipation Tmb =25 °C; see Figure 2 - - 230 W
Static characteristicsRDSon drain-source on-state resistance VGS =10 V; ID =25A; Tj =25°C;
see Figure 9; see Figure 10
-7.5 8.8 mΩ
Dynamic characteristicsQGD gate-drain charge VGS =10 V; ID =75A; VDS =80V; =25 °C; see Figure 11
-44 -nC
NXP Semiconductors PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET Pinning information Ordering information
Table 2. Pinning information
Table 3. Ordering informationPSMN009-100P TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
NXP Semiconductors PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET Limiting values
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 175°C - 100 V
VDGR drain-gate voltage Tj≤ 175 °C; Tj≥25 °C; RGS =20kΩ - 100 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tmb =100 °C; see Figure 1 -65 A
VGS =10V; Tmb=25 °C; see Figure 1;
see Figure 3
-75 A
IDM peak drain current pulsed; tp≤10 µs; Tmb=25 °C; see Figure 3 - 400 A
Ptot total power dissipation Tmb=25 °C; see Figure 2 - 230 W
Tstg storage temperature -55 175 °C junction temperature -55 175 °C
VGSM peak gate-source voltage pulsed; tp≤50 µs; Tj≤ 150 °C; δ =25% -30 30 V
Source-drain diode source current Tmb =25°C - 75 A
ISM peak source current pulsed; tp≤10 µs; Tmb=25°C - 400 A
Avalanche ruggednessEDS(AL)S non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25 °C; ID =35A;
Vsup=15 V; unclamped; tp =0.1 ms;
RGS =50Ω 120 mJ
IDS(AL)S non-repetitive drain-source
avalanche current
VGS =10V; Vsup =15V; RGS =50Ω;
Tj(init)=25 °C; unclamped
-75 A
NXP Semiconductors PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET
NXP Semiconductors PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-mb) thermal resistance from junction to mounting
base
see Figure 4 --0.65 K/W
Rth(j-a) thermal resistance from junction to ambient vertical in free air - 60 - K/W
NXP Semiconductors PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET Characteristics
Table 6. Characteristics
Static characteristicsV(BR)DSS drain-source breakdown voltage ID =0.25mA; VGS =0V; Tj= -55°C 90 - - V =0.25mA; VGS =0V; Tj=25°C 100 - - V
VGS(th) gate-source threshold voltage ID =1mA; VDS =VGS; Tj= 175 °C;
see Figure 8 --V =1mA; VDS =VGS; Tj =25°C;
see Figure 8
234V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 8
--4.4 V
IDSS drain leakage current VDS =30V; VGS =0V; Tj= 175°C - - 500 µA
VDS =30V; VGS =0V; Tj=25°C - 0.02 1 µA
IGSS gate leakage current VGS =20 V; VDS =0V; Tj=25°C - 10 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state resistance VGS =10 V; ID =25A; Tj= 175 °C;
see Figure 9; see Figure 10 20.25 23.8 mΩ
VGS =10 V; ID =25A; Tj =25°C;
see Figure 9; see Figure 10
-7.5 8.8 mΩ
Dynamic characteristicsQG(tot) total gate charge ID =75A; VDS =80V; VGS =10V; =25°C; see Figure 11 156 - nC
QGS gate-source charge - 31 - nC
QGD gate-drain charge - 44 - nC
Ciss input capacitance VDS =25V; VGS=0 V; f=1 MHz; =25°C; see Figure 12 8250 - pF
Coss output capacitance - 620 - pF
Crss reverse transfer capacitance - 300 - pF
td(on) turn-on delay time VDS =15V; RL =1.25 Ω; VGS =10V;
RG(ext) =6 Ω; Tj =25 °C; ID =12A
-38 -ns rise time - 59 - ns
td(off) turn-off delay time - 120 - ns fall time - 43 - ns
Source-drain diodeVSD source-drain voltage IS =25A; VGS =0V; Tj =25 °C;
see Figure 13
-0.8 1.2 V
NXP Semiconductors PSMN009-100P
N-channel TrenchMOS SiliconMAX standard level FET
