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PSMN006-20K
N-channel TrenchMOS SiliconMAX ultra low level FET
PSMN006-20K
N-channel TrenchMOS SiliconMAX ultra low level FET
Rev. 01 — 17 November 2009 Product data sheet Product profile
1.1 General descriptionSiliconMAX ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits Low conduction losses due to low
on-state resistance Suitable for very low gate drive
sources
1.3 Applications Computer motherboards DC-to-DC convertors Switched-mode power supplies
1.4 Quick reference data Table 1. Quick referenceVDS drain-source voltage Tj≥25 °C; Tj≤ 150°C - - 20 V drain current Tsp =25°C; VGS =4.5V;
see Figure 1 and 3
--32 A
Ptot total power
dissipation
Tsp =25°C; see Figure 2 --8.3 W
Dynamic characteristicsQGD gate-drain charge VGS= 2.5 V; ID =30A;
VDS =10V; Tj =25°C;
see Figure 11 13.2 - nC
Static characteristicsRDSon drain-source
on-state resistance
VGS= 2.5 V; ID =5A; =25°C; see Figure 9 and 10
-4.8 5.7 mΩ
VGS= 1.8 V; ID =5A; =25 °C; see Figure 10
-5.7 8.2 mΩ
VGS= 4.5 V; ID =5A; =25°C; see Figure 9 and 10
-4.2 5 mΩ
NXP Semiconductors PSMN006-20K
N-channel TrenchMOS SiliconMAX ultra low level FET Pinning information Ordering information Limiting values
Table 2. Pinning information source
SOT96-1 (SO8) source source gate drain drain drain drain
Table 3. Ordering informationPSMN006-20K SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 150°C - 20 V
VGS gate-source voltage -10 10 V drain current Tsp =25 °C; VGS= 4.5 V; see Figure 1 and 3 -32 A
IDM peak drain current Tsp =25 °C; tp≤10 µs; pulsed; see Figure 3 -60 A
Ptot total power dissipation Tsp =25 °C; see Figure 2 -8.3 W
Tstg storage temperature - 150 °C junction temperature -55 150 °C
Source-drain diode source current Tsp =25°C - 7.5 A
ISM peak source current Tsp =25 °C; tp≤10 µs; pulsed - 30 A
NXP Semiconductors PSMN006-20K
N-channel TrenchMOS SiliconMAX ultra low level FET
NXP Semiconductors PSMN006-20K
N-channel TrenchMOS SiliconMAX ultra low level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-sp) thermal resistance from
junction to solder point
mounted on a metal clad board;
see Figure 4
--15 K/W
NXP Semiconductors PSMN006-20K
N-channel TrenchMOS SiliconMAX ultra low level FET CharacteristicsTable 6. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj =25°C 20 - - V
VGS(th) gate-source threshold
voltage =1mA; VDS = VGS; Tj= 150 °C; see Figure 8 0.15 - - V =1mA; VDS = VGS; Tj =25°C; see Figure 8 0.4 0.7 - V
IDSS drain leakage current VDS =20V; VGS =0V; Tj= 150°C - - 0.5 µA
VDS =20V; VGS =0V; Tj=25°C - 0.05 1 µA
IGSS gate leakage current VGS =8V; VDS =0V; Tj=25°C - 10 100 nA
VGS =-8 V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state
resistance
VGS =2.5 V; ID =5A; Tj=25 °C; see Figure 9
and 10
-4.8 5.7 mΩ
VGS =1.8 V; ID =5A; Tj=25 °C; see Figure 10 -5.7 8.2 mΩ
VGS =4.5 V; ID =5A; Tj=25 °C; see Figure 9
and 10
-4.2 5 mΩ
Dynamic characteristicsQG(tot) total gate charge ID =30A; VDS =10V; VGS =25V; Tj =25°C;
see Figure 11
-32 - nC
QGS gate-source charge ID =30A; VDS =10V; VGS =2.5 V; Tj =25°C;
see Figure 11
-10 - nC
QGD gate-drain charge - 13.2 - nC
Ciss input capacitance VDS =20V; VGS=0 V; f=1 MHz; Tj =25°C;
see Figure 12 4350 - pF
Coss output capacitance - 825 - pF
Crss reverse transfer
capacitance 550 - pF
td(on) turn-on delay time VDS =10V; RL =10 Ω; VGS =4.5V;
RG(ext) =6 Ω; Tj =25°C
-65 - ns rise time - 32 - ns
td(off) turn-off delay time - 190 - ns fall time - 90 - ns
gfs forward
transconductance
VDS =15V; ID =10A - 25 - S
Source-drain diodeVSD source-drain voltage IS =3A; VGS =0V; Tj=25 °C; see Figure 13 - 0.75 1.3 V
trr reverse recovery time IS =10A; dIS/dt= -70 A/µs; VGS =0V;
VDS =25V; Tj =25°C
-47 - ns recovered charge - 17 - nC
NXP Semiconductors PSMN006-20K
N-channel TrenchMOS SiliconMAX ultra low level FET
