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PSMN005-75B-PSMN005-75P
N-channel enhancement mode field-effect transistor
PSMN005-75P/75BN-channel enhancement mode field-effect transistor
Rev. 01 — 26 April 2002 Product data DescriptionN-channel logic level field-effect power transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PSMN005-75P in SOT78 (TO-220AB)
PSMN005-75B in SOT404 (D2 -PAK).
Features Low on-state resistance Fast switching.
Applications High frequency computer motherboard DC to DC converters OR-ing applications.
Pinning information[1] It is not possible to make connection to pin 2 of the SOT404 package.
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol gate (g)
SOT78 (TO-220AB) SOT404 (D2- PAK) drain (d) [1] source (s) drain (d)
MBK106
MBK116
MBB076
Philips Semiconductors PSMN005-75P/75B
N-channel enhancement mode field-effect transistor Quick reference data Limiting values
Table 2: Quick reference dataVDS drain-source voltage (DC) 25°C≤Tj≤ 175°C - 75 V drain current (DC) Tmb =25 °C; VGS =10V - 75 A
Ptot total power dissipation Tmb =25°C - 230 W junction temperature - 175 °C
RDSon drain-source on-state resistance VGS=10 V; ID=25 A; Tj =25°C 4.3 5.0 mΩ
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) 25°C≤Tj≤ 175°C - 75 V
VDGR drain-gate voltage (DC) 25°C≤Tj≤ 175 °C; RGS =20kΩ -75 V
VGS gate-source voltage (DC) - ±20 V
VGSM gate-source voltage tp≤50 μs; pulsed;
duty cycle 25%;Tj≤ 150°C ±30 V drain current (DC) Tmb =25 °C; VGS =10V; Figure2 and3 -75 A
Tmb= 100 °C; VGS =10V; Figure2 -75 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs; Figure3 - 400 A
Ptot total power dissipation Tmb =25 °C; Figure1 - 230 W
Tstg storage temperature −55 +175 °C junction temperature −55 +175 °C
Source-drain diode source (diode forward) current (DC) Tmb =25°C - 75 A
ISM peak source (diode forward) current Tmb =25 °C; pulsed; tp≤10μs - 400 A
Avalanche ruggednessEDS(AL)S non-repetitive avalanche energy unclamped inductive load; =75A;tp= 0.1 ms; VDD =15V;
RGS =50 Ω; VGS=10 V; starting Tj =25°C 500 mJ
IDS(AL)S non-repetitive avalanche current unclamped inductive load;
VDD =15V;RGS =50 Ω; VGS =10V;
startingTj =25°C
-75 A
Philips Semiconductors PSMN005-75P/75B
N-channel enhancement mode field-effect transistor
Philips Semiconductors PSMN005-75P/75B
N-channel enhancement mode field-effect transistor Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-mb) thermal resistance from junctionto mounting base Figure4 - - 0.65 K/W
Rth(j-a) thermal resistance from junction to ambient
SOT78 vertical in still air - 60 - K/W
SOT404 mounted on a printed circuit board;
minimum footprint 50 - K/W
Philips Semiconductors PSMN005-75P/75B
N-channel enhancement mode field-effect transistor Characteristics
Table 5: Characteristics =25 °C unless otherwise specified.
Static characteristicsV(BR)DSS drain-source breakdown voltage ID= 0.25 mA; VGS =0V =25 °C75 - - V= −55 °C67 - - V
VGS(th) gate-source threshold voltage ID=1 mA; VDS =VGS; Figure9 =25 °C2 3 4 V= 175 °C1 - - V= −55°C - - 4.4 V
IDSS drain-source leakage current VDS=75 V; VGS =0V =25°C - 0.02 1 μA= 175°C - - 500 μA
IGSS gate-source leakage current VGS= ±20 V; VDS=0V - 10 100 nA
RDSon drain-source on-state resistance VGS= 10V; ID =25A; Figure7 and8 =25°C - 4.3 5.0 mΩ= 175°C - 9.25 10.75 mΩ
Dynamic characteristicsQg(tot) total gate charge ID=75 A; VDD =60V; VGS =10V;
Figure13 165 - nC
Qgs gate-source charge - 32 - nC
Qgd gate-drain (Miller) charge - 50 - nC
Ciss input capacitance VGS =0V; VDS=25 V; f=1 MHz;
Figure11
-8250 -pF
Coss output capacitance - 920 - pF
Crss reverse transfer capacitance - 470 - pF
td(on) turn-on delay time VDD=15 V; ID=12 A; VGS =10V; =6 Ω; resistive load
-37 - ns rise time -73 - ns
td(off) turn-off delay time - 144 - ns fall time -74 - ns
Source-drain diodeVSD source-drain (diode forward) voltageIS=25 A; VGS =0V; Figure12 - 0.8 1.2 V
Philips Semiconductors PSMN005-75P/75B
N-channel enhancement mode field-effect transistor
Philips Semiconductors PSMN005-75P/75B
N-channel enhancement mode field-effect transistor
