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PSMN005-30K
N-channel TrenchMOS SiliconMAX logic level FET
Product profile1.1 General descriptionSiliconMAX logic level N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits Low conduction losses due to low
on-state resistance Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications Computer motherboards DC-to-DC convertors Switched-mode power supplies
1.4 Quick reference data
PSMN005-30K
N-channel TrenchMOS SiliconMAX logic level FET
Rev. 2 — 22 December 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj≥25 °C; Tj≤ 150°C --30 V drain current Tsp =80 °C; VGS =10 V; see Figure 1 --20 A
Ptot total power dissipation Tsp =80 °C; see Figure 2 --3.5 W
Static characteristicsRDSon drain-source on-state
resistance
VGS =10V; ID =15A; Tj =25°C;
see Figure 9; see Figure 10
-4.4 5.5 mΩ
Dynamic characteristicsQGD gate-drain charge VGS =4.5 V; ID =20A; VDS =15V; =25°C; see Figure 11
-14 -nC
NXP Semiconductors PSMN005-30K
N-channel TrenchMOS SiliconMAX logic level FET Pinning information Ordering information Limiting values
Table 2. Pinning information
Table 3. Ordering informationPSMN005-30K SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1
Table 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 150°C - 30 V
VGS gate-source voltage -20 20 V drain current Tsp =80 °C; VGS =10 V; see Figure 1 -20 A
IDM peak drain current Tsp=25 °C; pulsed; tp≤10µs;
see Figure 3
-60 A
Ptot total power dissipation Tsp =80 °C; see Figure 2 -3.5 W
Tstg storage temperature -55 150 °C junction temperature -55 150 °C
Source-drain diode source current Tsp =80°C - 20 A
ISM peak source current Tsp=25 °C; pulsed; tp≤10µs - 60 A
NXP Semiconductors PSMN005-30K
N-channel TrenchMOS SiliconMAX logic level FET
NXP Semiconductors PSMN005-30K
N-channel TrenchMOS SiliconMAX logic level FET Thermal characteristics
Table 5. Thermal characteristicsRth(j-sp) thermal resistance from
junction to solder point
mounted on a metal clad board;
see Figure 4 20 K/W
NXP Semiconductors PSMN005-30K
N-channel TrenchMOS SiliconMAX logic level FET Characteristics
Table 6. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =250 µA; VGS =0V; Tj=25°C 30 --V
VGS(th) gate-source threshold
voltage =1mA; VDS =VGS; Tj= 150 °C;
see Figure 8
0.5 --V =1mA; VDS =VGS; Tj =-55 °C;
see Figure 8
--3.4 V =1mA; VDS =VGS; Tj =25°C;
see Figure 8 3V
IDSS drain leakage current VDS =30V; VGS =0V; Tj=25°C --1 µA
VDS =30V; VGS =0V; Tj= 150°C --0.5 mA
IGSS gate leakage current VGS =20V; VDS =0V; Tj=25°C - - 100 nA
VGS =-20 V; VDS =0V; Tj=25°C - - 100 nA
RDSon drain-source on-state
resistance
VGS =4.5 V; ID =13A; Tj =25°C;
see Figure 9; see Figure 10
-6.6 8 mΩ
VGS =10V; ID =15A; Tj =25°C;
see Figure 9; see Figure 10
-4.4 5.5 mΩ
Dynamic characteristicsQG(tot) total gate charge ID =20A; VDS =15V; VGS =4.5V; =25°C; see Figure 11
-34 -nC
QGS gate-source charge - 15 - nC
QGD gate-drain charge - 14 - nC
Ciss input capacitance VDS =25V; VGS=0 V; f=1 MHz; =25°C; see Figure 12 3100 - pF
Coss output capacitance - 605 - pF
Crss reverse transfer
capacitance 405 - pF
td(on) turn-on delay time VDS =15V; RL =15 Ω; VGS =10V;
RG(ext) =6 Ω; Tj =25°C
-18 -ns rise time - 16 - ns
td(off) turn-off delay time - 65 - ns fall time - 45 - ns
gfs transfer conductance VDS =15V; ID =20A; Tj =25°C - 60 - S
Source-drain diodeVSD source-drain voltage IS =15A; VGS =0V; Tj =25°C;
see Figure 13 0.81 1.3 V
trr reverse recovery time IS =10A; dIS/dt= -100 A/µs; VGS =0V;
VDS =25V; Tj =25°C
-35 -ns recovered charge - 20 - nC
NXP Semiconductors PSMN005-30K
N-channel TrenchMOS SiliconMAX logic level FET
