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PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
Product profile1.1 General descriptionUltra low capacitance double rail-to-rail ElectroStatic Discharge (ESD) protection devices
in leadless ultra small Surface-Mounted Device (SMD) plastic packages.
The devices are designed to protect two Hi-Speed data lines or high-frequency signal
lines from the damage caused by ESD and other transients.
PRTR5V0U2F and PRTR5V0U2K integrate two ultra low capacitance rail-to-rail
ESD protection channels and one additional ESD protection diode each to ensure
signal line protection even if no supply voltage is available.
1.2 Features ESD protection of two Hi-Speed data lines or high-frequency signal lines Ultra low input/output to ground capacitance: C(I/O-GND) =1pF ESD protection up to 8 kV IEC 61000-4-2, level4 (ESD) Very low clamping voltage due to an integrated additional ESD protection diode Very low reverse current AEC-Q101 qualified Leadless ultra small SMD plastic packages
1.3 Applications USB 2.0 interfaces Digital Video Interface (DVI) / High Definition Multimedia Interface (HDMI) interfaces Mobile and cordless phones Personal Digital Assistants (PDA) Digital cameras Wide Area Network (WAN) / Local Area Network (LAN) systems PCs, notebooks, printers and other PC peripherals
PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
Rev. 02 — 19 February 2009 Product data sheet
Table 1. Product overviewPRTR5V0U2F SOT886 MO-252 leadless ultra small
PRTR5V0U2K SOT891 - leadless ultra small
NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
1.4 Quick reference data[1] Measured from pin 1, 3, 4 or 6 to ground.
[2] Measured from pin1or 6 to pin3or4.
[3] Measured from pin 5 to ground.
Pinning information
Table 2. Quick reference dataTamb =25 °C unless otherwise specified.
Per channelC(I/O-GND) input/output to ground
capacitance=1 MHz;
V(I/O-GND) =0V
[1]- 1.0 1.5 pF
C(I/O-I/O) input/output to input/output
capacitance=1 MHz;
V(I/O-I/O) =0V
[2]- 0.6 - pF
Zener diodeVRWM reverse standoff voltage [3]- - 5.5 V
Csup supply pin to ground
capacitance=1 MHz;
VCC =0V
[3] -16 - pF
Table 3. Pinning
PRTR5V0U2F (SOT886) I/O1 input/output1 GND ground I/O2 input/output2 I/O2 input/output2
5VCC supply voltage I/O1 input/output1
PRTR5V0U2K (SOT891) I/O1 input/output1 GND ground I/O2 input/output2 I/O2 input/output2
5VCC supply voltage I/O1 input/output1
bottom view
2156006aab349
bottom view2156
006aab349
NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection Ordering information Marking Limiting values[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1, 3, 4 or 6 to pin 2 or5.
Table 4. Ordering informationPRTR5V0U2F XSON6 plastic extremely thin small outline package; leads; 6 terminals; body1× 1.45× 0.5 mm
SOT886
PRTR5V0U2K XSON6 plastic extremely thin small outline package; leads; 6 terminals; body1×1× 0.5 mm
SOT891
Table 5. Marking codesPRTR5V0U2F PF
PRTR5V0U2K PK
Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
Per deviceTamb ambient temperature −40 +85 °C
Tstg storage temperature −55 +125 °C
Table 7. ESD maximum ratingsTamb =25 °C unless otherwise specified.
Per channelVESD electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2] -8 kV
MIL-STD-883 (human
body model)
[2] -10 kV
NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
Table 8. ESD standards compliance
Per channelIEC 61000-4-2; level 4 (ESD) >8kV (contact)
MIL-STD-883; class 3 (human body model) >4kV
NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection Characteristics[1] Measured from pin 1, 3, 4 or 6 to ground.
[2] Measured from pin1or 6 to pin3or4.
[3] Measured from pin 1, 3, 4 or 6 to pin5.
[4] Measured from pin 5 to ground.
Table 9. CharacteristicsTamb =25 °C unless otherwise specified.
Per channel reverse current VR =5V [1]- <1 100 nA
C(I/O-GND) input/output to ground
capacitance=1 MHz;
V(I/O-GND) =0V
[1]- 1.0 1.5 pF
C(I/O-I/O) input/output to input/output
capacitance=1 MHz;
V(I/O-I/O) =0V
[2]- 0.6 - pF forward voltage IF =1mA [3]- 0.7 - V
Zener diodeVRWM reverse standoff voltage [4]- - 5.5 V
VBR breakdown voltage [4] 6- 9V
Csup supply pin to ground
capacitance=1 MHz;
VCC =0V
[4] -16 - pF
NXP Semiconductors PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
