PN930 ,NPN General Purpose Amplifierapplications at collector currents from 1μ to 50 mA.Sourced from Process 07. See 2N5088 for charac ..
PN930 ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
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PN930
NPN General Purpose Amplifier
PN930 Discrete POWER & Signal Technologies PN930 TO-92 C B E NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1μ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 45 V CEO VCBO Collector-Base Voltage 45 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 100 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN930 P Total Device Dissipation 625 mW D 5.0 Derate above 25°C mW/°C Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC Thermal Resistance, Junction to Ambient 200 °C/W RθJA 1997
