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PN5179FSCN/a21885avaiNPN RF Transistor
PN5179FairchildN/a2000avaiNPN RF Transistor


PN5179 ,NPN RF Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
PN5179 ,NPN RF TransistorMPS5179 / MMBT5179 / PN5179MPS5179 MMBT5179 PN5179CEC TO-92 C TO-92B EBSOT-23BEMark: 3CNPN RF Trans ..
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PN5179
NPN RF Transistor
MPS5179 / MMBT5179 / PN5179 MPS5179 MMBT5179 PN5179 C E C TO-92 C TO-92 B E B SOT-23 B E Mark: 3C NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers with collector currents in the 100 μA to 30 mA range in common emitter or common base mode of operation, and in low frequency drift, high ouput UHF oscillators. Sourced from Process 40. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 12 V CEO V Collector-Base Voltage 20 V CBO V Emitter-Base Voltage 2.5 V EBO I Collector Current - Continuous 50 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN/MPS5179 *MMBT5179 P Total Device Dissipation 350 225 mW D Derate above 25°C 2.8 1.8 mW/°C Thermal Resistance, Junction to Ambient 357 556 R °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  1997
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