PN4303 ,Leaded Small Signal Transistor General PurposePN4303PN4303N-Channel General Purpose Amplifier• This device is designed primarily for low level au ..
PN4303 ,Leaded Small Signal Transistor General Purposeapplications with high impedance signal sources.• Sourced from process 52.TO-9211. Drain 2. Source ..
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PN4303
N-Channel General Purpose Amplifier
PN4303 PN4303 N-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. • Sourced from process 52. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Drain-Gate Voltage 30 V DG Gate-Source Voltage -30 V V GS Forward Gate Current 50 mA I GF T , T Operating and Storage Junction Temperature Range -55 ~ 150 °C J STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Gate-Source Breakdwon Voltage I = -1.0μA, V = 0 -30 V (BR)GSS G DS I Gate Reverse Current V = -10V, V = 0 -1.0 nA GSS GS DS V Gate-Source Cutoff Voltage V = 20V, I = 1.0nA -6.0 V GS(off) DS D On Characteristics I Zero-Gate Voltage Drain Current * V = -15V, V = 0 4.0 10 mA DSS DS GS Thermal Characteristics T =25°C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25°C 5.0 mW/°C Thermal Resistance, Junction to Case 125 °C/W R θJC Thermal Resistance, Junction to Ambient 357 °C/W R θJA ©2004 Rev. A, April 2004
