PN4302 ,Leaded Small Signal Transistor General Purposeapplications with high impedance signal sources.• Sourced from process 52.TO-9211. Drain 2. Source ..
PN4302 ,Leaded Small Signal Transistor General PurposePN4302PN4302N-Channel General Purpose Amplifier• This device is designed primarily for low level au ..
PN4302 ,Leaded Small Signal Transistor General Purposeapplications involving pulsed or low duty cycle operations.
PN4303 ,Leaded Small Signal Transistor General PurposePN4303PN4303N-Channel General Purpose Amplifier• This device is designed primarily for low level au ..
PN4303 ,Leaded Small Signal Transistor General Purposeapplications with high impedance signal sources.• Sourced from process 52.TO-9211. Drain 2. Source ..
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PN4302
N-Channel General Purpose Amplifier
PN4302 PN4302 N-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. • Sourced from process 52. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Drain-Gate Voltage 30 V DG Gate-Source Voltage -30 V V GS Forward Gate Current 50 mA I GF T , T Operating and Storage Junction Temperature Range -55 ~ 150 °C J STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Gate-Source Breakdwon Voltage I = -1.0μA, V = 0 -30 V (BR)GSS G DS I Gate Reverse Current V = -10V, V = 0 -1.0 nA GSS GS DS V Gate-Source Cutoff Voltage V = 20V, I = 1.0nA -4.0 V GS(off) DS D On Characteristics I Zero-Gate Voltage Drain Current * V = -15V, V = 0 0.5 5.0 mA DSS DS GS Thermal Characteristics T =25°C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25°C 5.0 mW/°C Thermal Resistance, Junction to Case 125 °C/W R θJC Thermal Resistance, Junction to Ambient 357 °C/W R θJA ©2004 Rev. A, April 2004
