PN4143 ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
PN4143 ,PNP General Purpose AmplifierPN4143Discrete POWER & SignalTechnologiesPN4143TO-92CBEPNP General Purpose AmplifierThis device is ..
PN4248 ,PNP Low Level Low Noise Amplifiers_ ‘FAIRCHILD SEMICONDUCTOR
5L1 DEIBHE‘IEW 0027435 7 Ill"
3469674 FA1RCH1l-D SEMICONDUCTOR 840 2 ..
PN4248 ,PNP Low Level Low Noise AmplifiersELECTRICAL CHARACTERISTICS (25° C Ambient Temperature unless otherwise noted) (Note 6)
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PN4249 ,Leaded Small Signal Transistor General Purpose
PN4249 ,Leaded Small Signal Transistor General Purpose
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PN4143
PNP General Purpose Amplifier
PN4143 Discrete POWER & Signal Technologies PN4143 TO-92 C B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO VCBO Collector-Base Voltage 60 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 800 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN4143 P Total Device Dissipation 625 mW D 5.0 Derate above 25°C mW/°C Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC Thermal Resistance, Junction to Ambient 200 °C/W RθJA 1997
