PN4122 ,PNP General Purpose AmplifierPN4122Discrete POWER & SignalTechnologiesPN4122TO-92CBEPNP General Purpose AmplifierThis device is ..
PN4122 ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
PN4122 ,PNP General Purpose AmplifierPN4122Discrete POWER & SignalTechnologiesPN4122TO-92CBEPNP General Purpose AmplifierThis device is ..
PN4141 ,NPN General Purpose AmplifierPN4141Discrete POWER & SignalTechnologiesPN4141TO-92CBENPN General Purpose AmplifierThis device is ..
PN4141 ,NPN General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
PN4143 ,PNP General Purpose Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
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PN4122
PNP General Purpose Amplifier
PN4122 Discrete POWER & Signal Technologies PN4122 TO-92 C B E PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 40 V CEO VCBO Collector-Base Voltage 40 V V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 °C T , T J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN4122 P Total Device Dissipation 625 mW D 5.0 Derate above 25°C mW/°C Rθ Thermal Resistance, Junction to Case 83.3 °C/W JC Thermal Resistance, Junction to Ambient 200 °C/W RθJA 1997
