PN4117A_D26Z ,N-Channel SwitchPN4117APN4117AN-Channel Switch• This device is designed for low current DC and audio application. T ..
PN4118A ,Ultra Low LeakageS-04028—Rev. F, 04-Jun-017-12N/PN/SST4117A SeriesVishay Siliconix 1Gate-Source/ ..
PN4118A ,Ultra Low Leakageapplications information see AN105.Document Number: 70239
PN4119 ,N-Channel Switchapplications.These devices provide excellent performance as input stages forsub-picoamp instrumenta ..
PN4119A ,Ultra Low LeakageS-04028—Rev. F, 04-Jun-017-2g – Output Conductance ( S)g – Forward Transconductance ( S)fs os2N/PN/ ..
PN4119A ,Ultra Low LeakageS-04028—Rev. F, 04-Jun-017-4A – Voltage Gain I – Drain Current ( A) I – Drain Current ( A)VD DC – I ..
PT2353H , Satellite Subwoofer 3-Speaker System Electronics Crossover IC
PT2353H-S , Satellite Subwoofer 3-Speaker System Electronics Crossover IC
PT2366-MS , 1W Class-AB Audio Power Amplifier
PT2380 , 4 Mode Preset Equalizer IC
PT2381-S , 4-Mode Preset Equalizer IC
PT2386 , 3D Effect IC
PN4117A_D26Z
N-Channel Switch
PN4117A PN4117A N-Channel Switch • This device is designed for low current DC and audio application. These devices provide excellent performance as input stages for sub- picoamp instrumentation or any high impedance signal sources. • Sourced from process 53. TO-92 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * T =25°C unless otherwise noted A Symbol Parameter Value Units V Drain-Gate Voltage 40 V DG V Gate-Source Voltage -40 V GS I Forward Gate Current 50 mA GF T Operating and storage Temperature Range - 55 ~ 150 °C STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1. These ratings are based on a maximum junction temperature of 150degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T =25°C unless otherwise noted A Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Gate-Source Breakdown Voltage V = 0, I = -1μA-40 V (BR)GSS DS G V (off) Gate-Source Cutoff Voltage V = -10V, I = 1.0nA -0.6 -1.8 V GS DS D I Gate Reverse Current V = 0V, V = -20V -1.0 pA GSS DS GS On Characteristics I Zero-Gate Voltage Drain Current * V = 10V, V = 0 30 90 μA DSS DS GS Small Signal Characteristics gfs Common Source Forward Transconductance V = 10V, V = 0 70 210 mmhos DS GS f = 1.0KHz g Common Source Output Conductance V = 10V, V = 0 3.0 mmhos OSS DS GS f = 1KHz R Common Source Forward Conductance V = 10V, V = 0 60 mmhos E(YFS) DS GS f = 30MHz C Input Capacitance V = 10V, V = 0 3.0 pF ISS DS GS f = 1.0KHz C Reverse Transfer Capacitance V = 10V, V = 0 1.5 pF rss DS GS f = 1.0MHz * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.0% Thermal Characteristics T =25°C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 350 mW D Derate above 25°C 2.8 mW/°C R Thermal Resistance, Junction to Case 125 °C/W θJC R Thermal Resistance, Junction to Ambient 357 °C/W θJA ©2002 Rev. A1, November 2002
