PN3646 ,NPN Switching TransistorElectrical Characteristics T =25°C unless otherwise notedaSymbol Parameter Test Condition Min. Max. ..
PN3646 ,NPN Switching TransistorPN3646PN3646NPN Switching Transistor• Sourced from process 22.TO-9211. Emitter 2. Base 3. Collec ..
PN3684 ,Conductor Products, Inc. - GENERAL PURPOSE AMPS
PN3684 ,Conductor Products, Inc. - GENERAL PURPOSE AMPS
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PN3685 ,Conductor Products, Inc. - GENERAL PURPOSE AMPS
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PN3646
NPN Switching Transistor
PN3646 PN3646 NPN Switching Transistor • Sourced from process 22. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 15 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 5.0 V EBO I Collector Current - Continued 300 mA C T Operating and Storage Junction Temperature Range - 55 ~ 150 °C STG * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage * I = 10mA, I = 0 15 V (BR)CEO C B BV Collector-Emitter Breakdown Voltage I = 100μA, V = 0 40 V (BR)CES C BE BV Collector-Base Breakdown Voltage I = 100μA, I = 0 40 V (BR)CBO C E BV Emitter-Base Breakdown Voltage I = 100μA, I = 0 5.0 V (BR)EBO E C I Collector Cutoff Current V = 20V, V = 0 0.5 μA CES CE BE V = 20V, V = 0, T = 65°C 3.0 μA CE BE a On Characteristics * h DC Current Gain V = 0.4V, I = 30mA 30 120 FE CE C V = 0.5V, I = 100mA 25 CE C V = 1.0V, I = 300mA 15 CE C V (sat) Collector-Emitter Saturation Voltage I = 30mA, I = 3.0mA 0.2 V CE C B I = 100mA, I = 10mA 0.28 V C B I = 300mA, I = 3.0mA 0.5 V C B V (sat) Base-Emitter Saturation Voltage I = 30mA, I = 3.0mA 0.73 0.95 V BE C B I = 100mA, I = 10mA 1.2 V C B I = 300mA, I = 3.0mA 1.7 V C B Small Signal Characteristics C Collector-Base Capacitance V = 5.0V, I = 0, f = 1MHz 5.0 pF cb CB E C Emitter-Base Capacitance V = 5.0V, I = 0, f = 1MHz 8.0 pF eb CB C h Small-Signal Current Gain I = 300mA, V = 10V, f = 100MHz 3.5 fe C CE * Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% ©2004 Rev. A, October 2004
