PN3566 ,Leaded Small Signal Transistor General PurposePN3566PN3566NPN General Purpose Amplifier• This device is for use as a medium amplifier and switch ..
PN3566 ,Leaded Small Signal Transistor General PurposePN3566PN3566NPN General Purpose Amplifier• This device is for use as a medium amplifier and switch ..
PN3566 ,Leaded Small Signal Transistor General PurposePN3566PN3566NPN General Purpose Amplifier• This device is for use as a medium amplifier and switch ..
PN3566 ,Leaded Small Signal Transistor General PurposePN3566PN3566NPN General Purpose Amplifier• This device is for use as a medium amplifier and switch ..
PN3567 ,Leaded Small Signal Transistor General Purpose
PN3567 ,Leaded Small Signal Transistor General Purpose
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PN3566
NPN General Purpose Amplifer
PN3566 PN3566 NPN General Purpose Amplifier • This device is for use as a medium amplifier and switch requiring collector currents up 300mA. • Sourced from process 19. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 30 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 5 V EBO I Collector Current - Continuous 600 mA C T T Operating and Storage Junction Temperature Range - 55 ~ 150 °C J, STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = 30mA, I = 0 30 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 100μA, I = 0 40 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10μA, I = 0 5 V (BR)EBO E C I Collector Cut-off Current V = 20V, I = 0 50 nA CBO CB E I Emitter Cut-off Current V = 5V, I = 0 10 μA EBO EB C On Characteristics h DC Current Gain V = 10V, I = 2.0mA 80 FE CE C V = 10V, I = 10mA 150 600 CE C V (sat) Collector-Emitter Saturation Voltage * I = 100mA, I = 10mA 1.0 V CE C B V (on) Base-Emitter On Voltage V = 1V, I = 100mA 0.9 V BE CE C Small Signal Characteristics C Output Capacitance V = 10V, I = 0 25 pF obo CB E * Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0% Thermal Characteristics T =25°C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 625 mW D Derate above 25°C 5 mW/°C R Thermal Resistance, Junction to Ambient 83.3 °C/W θJA R Thermal Resistance, Junction to Case 200 °C/W θJC ©2004 Rev. A, October 2004
