PN3563 ,NPN RF AmplifierPN3563PN3563C TO-92BENPN RF AmplifierThis device is designed for use as RF amplifiers, oscillators ..
PN3563 ,NPN RF AmplifierPN3563PN3563C TO-92BENPN RF AmplifierThis device is designed for use as RF amplifiers, oscillators ..
PN3563 ,NPN RF Amplifierapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
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PN3563
NPN RF Amplifier
PN3563 PN3563 C TO-92 B E NPN RF Amplifier This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. See PN918 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 15 V CEO V Collector-Base Voltage 30 V CBO V Emitter-Base Voltage 2.0 V EBO I Collector Current - Continuous 50 mA C Operating and Storage Junction Temperature Range -55 to +150 C T , T ° J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN3563 P Total Device Dissipation 350 mW D 2.8 Derate above 25°C mW/°C R Thermal Resistance, Junction to Case 125 C/W θJC ° R Thermal Resistance, Junction to Ambient 357 °C/W θJA 1997
