PN2369A ,NPN Switching TransistorPN2369A / MMBT2369APN2369A MMBT2369ACETO-92CBB SOT-23EMark: 1SNPN Switching TransistorThis device i ..
PN2369A ,NPN Switching Transistorapplications involving pulsed or low duty cycle operations.Thermal Characteristics TA = 25°C u ..
PN2369A ,NPN Switching TransistorPN2369A / MMBT2369APN2369A MMBT2369ACETO-92CBB SOT-23EMark: 1SNPN Switching TransistorThis device i ..
PN2369A ,NPN Switching Transistor
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PN2369A
NPN Switching Transistor
PN2369A / MMBT2369A PN2369A MMBT2369A C E TO-92 C B B SOT-23 E Mark: 1S NPN Switching Transistor This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage 15 V CEO V Collector-Base Voltage 40 V CBO V Emitter-Base Voltage 4.5 V EBO I Collector Current - Continuous 200 mA C Operating and Storage Junction Temperature Range -55 to +150 T , T °C J stg *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units PN2369A MMBT2369A* P Total Device Dissipation 350 225 mW D 2.8 1.8 Derate above 25°C mW/°C R Thermal Resistance, Junction to Case 125 C/W θJC ° R Thermal Resistance, Junction to Ambient 357 556 °C/W θJA *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997
