PN2222 , 0.625W Switching NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 35 hFE.PN2222PN2222General Purpose TransistorTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silico ..
PN2222 , 0.625W Switching NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 35 hFE.PN2222PN2222General Purpose TransistorTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silico ..
PN2222 , 0.625W Switching NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 35 hFE.PN2222PN2222General Purpose TransistorTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silico ..
PN2222A ,Leaded Small Signal Transistor General PurposePN2222A®SMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAOrdering Code Marking Package / ShipmentPN2222A ..
PN2222ATA ,NPN General Purpose Amplifier
PN2369 ,NPN High Speed Switsh
PT2301 , 1 Watt Audio Power Amplifier
PT2303 , 2W × 2 Class AB Audio Power Amplifier
PT2303-TX , 2W × 2 Class AB Audio Power Amplifier
PT2303-TX , 2W × 2 Class AB Audio Power Amplifier
PT2305 , 2.5W × 2 Class AB Audio Power Amplifier
PT2307 , 1W Audio Power Integration Amplifier
PN2222
NPN General Purpose Amplifier
PN2222 PN2222 General Purpose Transistor TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 600 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 60 V CBO C E BV Collector Emitter Breakdown Voltage I =10mA, I =0 30 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 5 V EBO E C I Collector Cut-off Current V =50V, I =0 0.01 μA CBO CB E I Emitter Cut-off Current V =3V, I =0 10 nA EBO EB C h DC Current Gain V =10V, I =0.1mA 35 FE CE C V =10V, *I =150mA 100 300 CE C V (sat) * Collector-Emitter Saturation Voltage I =500mA, I =50mA 1 V CE C B V (sat) * Base-Emitter Saturation Voltage I =500mA, I=50mA 2V BE C B f Current Gain Bandwidth Product V =20V, I =20mA, f=100MHz 300 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 8 pF ob CB E * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% ©2004 Rev. A, November 2004
