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PMZ760SN
N-channel TrenchMOS standard level FET
Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
1.3 Applications
1.4 Quick reference data Pinning information
PMZ760SN
N-channel TrenchMOS standard level FET
Rev. 02 — 12 July 2007 Product data sheet
BOTTOM VIEW Profile 55 % lower than SOT23 n Footprint 90 % smaller than SOT23 Low on-state resistance n Fast switching Leadless package n Standard level compatible threshold Driver circuits n Load switching in portable appliances VDS≤60V n ID≤ 1.22A RDSon≤ 900 mΩ n Ptot≤ 2.50W
Table 1. Pinning gate (G)
SOT883 (SC-101) source (S) drain (D)
Transparent
top view
mbb076
NXP Semiconductors PMZ760SN
N-channel TrenchMOS standard level FET Ordering information Limiting values
Table 2. Ordering informationPMZ760SN SC-101 leadless ultra small plastic package; 3 solder lands;
body 1.0× 0.6× 0.5 mm
SOT883
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 3. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage 25°C≤Tj≤ 150°C - 60 V
VDGR drain-gate voltage (DC) 25°C≤Tj≤ 150 °C; RGS =20kΩ -60 V
VGS gate-source voltage - ±20 V drain current Tmb =25 °C; VGS=10 V; see Figure 2 and3 - 1.22 A
Tmb= 100 °C; VGS=10 V; see Figure2 - 0.77 A
IDM peak drain current Tmb =25 °C; pulsed; tp≤10 μs; see Figure3 - 2.44 A
Ptot total power dissipation Tmb =25 °C; see Figure1 - 2.50 W
Tstg storage temperature −55 +150 °C junction temperature −55 +150 °C
Source-drain diode source current Tmb =25°C - 1.22 A
ISM peak source current Tmb =25 °C; pulsed; tp≤10μs - 2.44 A
Electrostatic dischargeVesd electrostatic discharge voltage all pins
human body model; C = 100 pF; R = 1.5 kΩ -95 V
machine model; C = 200pF - 50 V
NXP Semiconductors PMZ760SN
N-channel TrenchMOS standard level FET
NXP Semiconductors PMZ760SN
N-channel TrenchMOS standard level FET Thermal characteristics[1] Mounted on a printed-circuit board; verticalinstillair.
Table 4. Thermal characteristicsRth(j-sp) thermal resistance from junction to solder point see Figure4 - - 50 K/W
Rth(j-a) thermal resistance from junction to ambient [1]- 670 - K/W
NXP Semiconductors PMZ760SN
N-channel TrenchMOS standard level FET Characteristics
Table 5. Characteristics =25 °C unless otherwise specified.
Static characteristicsV(BR)DSS drain-source breakdown
voltage =10 μA; VGS =0V =25°C 60 --V= −55°C 55 --V
VGS(th) gate-source threshold voltage ID= 0.25 mA; VDS =VGS; see Figure9 and10 =25°C 123V= 150°C 0.6 - - V= −55°C - - 3.5 V
IDSS drain leakage current VDS=60 V; VGS =0V =25°C --1 μA= 150°C - - 100 μA
IGSS gate leakage current VGS= ±20 V; VDS=0V - 10 100 nA
RDSon drain-source on-state
resistance
VGS=10 V; ID= 0.3 A; see Figure 6 and8 =25°C - 760 900 mΩ= 150°C - 1400 1665 mΩ
VGS= 4.5 V; ID= 0.075 A; see Figure 6 and8 - 1100 1600 mΩ
Dynamic characteristicsQG(tot) total gate charge ID=1 A; VDS=30 V; VGS =10V;
see Figure 11 and12 1.05 - nC
QGS gate-source charge - 0.2 - nC
QGD gate-drain charge - 0.22 - nC
VGS(pl) gate-source plateau voltage - 4 - V
Ciss input capacitance VGS =0V; VDS=30 V; f=1 MHz;
see Figure14
-23 - pF
Coss output capacitance - 4.8 - pF
Crss reverse transfer capacitance - 3.4 - pF
td(on) turn-on delay time VDS=30 V; RL =15 Ω;VGS =10V; RG =6Ω -2 -ns rise time -4 -ns
td(off) turn-off delay time - 5 - ns fall time - 2.2 - ns
Source-drain diodeVSD source-drain voltage IS= 0.3 A; VGS=0 V; see Figure13 - 0.83 1.2 V
NXP Semiconductors PMZ760SN
N-channel TrenchMOS standard level FET
NXP Semiconductors PMZ760SN
N-channel TrenchMOS standard level FET
