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Partno	Mfg	Dc	Qty	Available	Descript
PMV90EN	NXP/PH	N/a	10000	avai	30 V, single N-channel Trench MOSFET

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PMV90EN
30 V, single N-channel Trench MOSFET
Product profile1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology
1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Pinning information
PMV90EN
30 V, single N-channel Trench MOSFET
Rev. 1 — 13 February 2012 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tamb=25°C --30 V
VGS gate-source voltage -20 - 20 V drain current VGS =10V; Tamb=25 °C; t ≤ 5 s [1] --2.1 A
Static characteristics
RDSon drain-source on-state
resistance
VGS =10V; ID =1.9 A; Tj=25°C - 70 84 mΩ
Table 2. Pinning information
NXP Semiconductors PMV90EN
30 V, single N-channel Trench MOSFET Ordering information Marking
[1] % = placeholder for manufacturing site code
Table 3. Ordering information
PMV90EN TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
PMV90EN EC%
NXP Semiconductors PMV90EN
30 V, single N-channel Trench MOSFET Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tamb =25°C - 30 V
VGS gate-source voltage -20 20 V drain current VGS =10V; Tamb=25 °C; t ≤ 5 s [1] -2.1 A
VGS =10V; Tamb =25°C [1] -1.9 A
VGS =10V; Tamb= 100°C [1] -1.2 A
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - 7.6 A
Ptot total power dissipation Tamb =25°C [2] - 310 mW
[1] - 455 mW
Tsp=25°C - 2085 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1] -0.5 A
NXP Semiconductors PMV90EN
30 V, single N-channel Trench MOSFET Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Table 6. Thermal characteristics
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 350 400 K/W
[2] - 240 275 K/W
in free air; t ≤ 5 s [2] - 186 215 K/W
Rth(j-sp) thermal resistance
from junction to solder
point 5060K/W
NXP Semiconductors PMV90EN
30 V, single N-channel Trench MOSFET

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