PMV50UPE Fast Delivery |IC PHOENIX CO.,LIMITED

PMV50UPE ,20 V, single P-channel Trench MOSFETApplicationsRelay driver•• High-side loadswitchSwitching circuits•1.4 Quick reference dataTable 1. ..
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PMV50UPE
20 V, single P-channel Trench MOSFET
PMV50UPE
20 V, single P-channel Trench MOSFET20 July 2012 Product data sheet Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.
1.2 Features and benefits 3 kV ESD protected• Trench MOSFET technology• Low threshold voltage
1.3 Applications Relay driver• High-side loadswitch• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - -20 V
VGS gate-source voltage
Tj = 25 °C - 8 V drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.7 A
Static characteristics
RDSon drain-source on-stateresistance VGS = -4.5 V; ID = -3.2 A; Tj = 25 °C - 50 66 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
NXP Semiconductors PMV50UPE
20 V, single P-channel Trench MOSFET Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate S source D drain 1 2
TO-236AB (SOT23)
017aaa259 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMV50UPE TO-236AB plastic surface-mounted package; 3 leads SOT23 Marking
Table 4. Marking codes
Type number Marking code
[1]
PMV50UPE %CZ
[1] % = placeholder for manufacturing site code Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - -20 V
VGS gate-source voltage
Tj = 25 °C 8 V
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - -3.7 A
VGS = -4.5 V; Tamb = 25 °C [1] - -3.2 A drain current
VGS = -4.5 V; Tamb = 100 °C [1] - -2 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -12.8 A [2] - 500 mW
NXP Semiconductors PMV50UPE
20 V, single P-channel Trench MOSFET
Symbol Parameter Conditions Min Max Unit
[1] - 955 mW
Tsp = 25 °C - 3570 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb = 25 °C [1] - -1 A
ESD maximum rating
VESD electrostatic discharge voltage HBM [3] - 3000 V
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.[3] Measured between all pins.(°C)-75 17512525 75-25
017aaa123
Pder(%)
Fig. 1. Normalized total power dissipation as a (°C)-75 17512525 75-25
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Ider(%)
Fig. 2. Normalized continuous drain current as a
function of junction temperature
NXP Semiconductors PMV50UPE
20 V, single P-channel Trench MOSFET
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-102(A)
VDS (V)-10-1 -102-10-1
tp = 1 ms
tp = 10 ms
DC; Tsp = 25 °C
DC; Tamb = 25 °C; drain mounting pad 6 cm2
tp = 100 ms
Limit RDSon = VDS/ID
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 218 250 K/W
[2] - 114 130 K/W
Rth(j-a) thermal resistancefrom junction to
ambient
in free air
[3] - 80 92 K/W
Rth(j-sp) thermal resistance
from junction to solderpoint 30 35 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2]2.[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 , t ≤ 5 s.
NXP Semiconductors PMV50UPE
20 V, single P-channel Trench MOSFET
017aaa692
tp (s)10-3 102 10310110-2 10-12
Zth(j-a)(K/W)
duty cycle = 1
0.75 0.5
0.33 0.250.2
0.05 0.02
0.01 0
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa693
tp (s)10-3 102 10310110-2 10-1
Zth(j-a)(K/W)
duty cycle = 1
0.75 0.50.33 0.250.2 0.1
0.05 0.02
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values Characteristics Max Unit - V -0.9 V -1 µA -10 µA
NXP Semiconductors PMV50UPE
20 V, single P-channel Trench MOSFET
Symbol Parameter Conditions Min Typ Max Unit
VGS = -8 V; VDS = 0 V; Tj = 25 °C - - 10 µAIGSS gate leakage current
VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 10 µA
VGS = -4.5 V; ID = -3.2 A; Tj = 25 °C - 50 66 mΩ
VGS = -4.5 V; ID = -3.2 A; Tj = 150 °C - 73 96 mΩ
VGS = -2.5 V; ID = -2.1 A; Tj = 25 °C - 57 81 mΩ
RDSon drain-source on-stateresistance
VGS = -1.8 V; ID = -2.1 A; Tj = 25 °C - 70 110 mΩ
gfs forward transconductance VDS = -5 V; ID = -3.2 A; Tj = 25 °C - 18 - S
Dynamic characteristics
QG(tot) total gate charge - 10.5 15.7 nC
QGS gate-source charge - 2.2 - nC
QGD gate-drain charge
VDS = -10 V; ID = -3.2 A; VGS = -4.5 V;
Tj = 25 °C 2.7 - nC
Ciss input capacitance - 24 - pF
Coss output capacitance - 106 - pF
Crss reverse transfercapacitance
VDS = -10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C 14.6 - pF
td(on) turn-on delay time - 400 - ns rise time - 700 - ns
td(off) turn-off delay time - 2180 - ns fall time
VDS = -10 V; ID = -3.2 A; VGS = -4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C 8800 - ns
Source-drain diode
VSD source-drain voltage IS = -1 A; VGS = 0 V; Tj = 25 °C - -0.8 -1.2 V
017aaa694
-15(A)
-4.5V-3V-3.5VV
-1.8V
017aaa695
VGS (V)0 -1.5-1.0-0.5
-10-3(A)
min typ max
Tj = 25 °C; VDS = -5 V
Fig. 7. Sub-threshold drain current as a function of
NXP Semiconductors PMV50UPE
20 V, single P-channel Trench MOSFET
ID (A)0 -12-8-4
017aaa696140RDSon(mΩ)
VGS=-4.5V
-1.5V -1.8V
-2V
-2.5V
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a functionof drain current; typical values
017aaa697
VGS (V)0 -12-8-4
RDSon(mΩ)=150°C=25°C
ID = -1 A
Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values
VGS (V)0 -3-2-1
017aaa698
-12(A)=150°C Tj=25°C
VDS > ID × RDSon
Tj (°C)-60 1801200 60
017aaa699
Fig. 11. Normalized drain-source on-state resistanceas a function of junction temperature; typical
values

Partno	Mfg	Dc	Qty	Available	Descript
PMV50UPE	NXP/PH	N/a	10000	avai	20 V, single P-channel Trench MOSFET