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Partno	Mfg	Dc	Qty	Available	Descript
PMV33UPE	NXP/PH	N/a	10000	avai	20 V, single P-channel Trench MOSFET

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PMV33UPE
20 V, single P-channel Trench MOSFET
Product profile1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology 2 kV ESD protected
1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
PMV33UPE
20 V, single P-channel Trench MOSFET
Rev. 1 — 12 June 2012 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj=25°C ---20 V
VGS gate-source voltage -8 - 8 V drain current VGS =-4.5V; Tamb =25°C; t ≤ 5 s [1] ---5.3 A
Static characteristics
RDSon drain-source on-state
resistance
VGS =-4.5V; ID =-3 A; Tj=25°C - 30 36 mΩ
NXP Semiconductors PMV33UPE
20 V, single P-channel Trench MOSFET Pinning information Ordering information Marking
[1] % = placeholder for manufacturing site code
Table 2. Pinning information
Table 3. Ordering information
PMV33UPE TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
PMV33UPE EJ%
NXP Semiconductors PMV33UPE
20 V, single P-channel Trench MOSFET Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj =25°C - -20 V
VGS gate-source voltage -8 8 V drain current VGS =-4.5 V; Tamb =25°C; t ≤ 5 s [1] --5.3 A
VGS =-4.5 V; Tamb =25°C [1] --4.4 A
VGS =-4.5 V; Tamb =100°C [1] --2.8 A
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - -17.6 A
Ptot total power dissipation Tamb =25°C [2] - 490 mW
[1] - 980 mW
Tsp=25°C - 4150 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1] --1.2 A
ESD maximum rating
VESD electrostatic discharge voltage HBM [3] - 2000 V
NXP Semiconductors PMV33UPE
20 V, single P-channel Trench MOSFET Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 , t ≤ 5 s.
Table 6. Thermal characteristics
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 222 255 K/W
[2] - 111 128 K/W
[3] - 7485K/W
Rth(j-sp) thermal resistance
from junction to solder
point 2530K/W
NXP Semiconductors PMV33UPE
20 V, single P-channel Trench MOSFET

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