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Partno	Mfg	Dc	Qty	Available	Descript
PMV32UP	NXP/PH	N/a	10000	avai	20 V, 4 A P-channel Trench MOSFET

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PMV32UP
20 V, 4 A P-channel Trench MOSFET
Product profile1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits 1.8 V drain-source on-state resistance
rated Very fast switching Trench MOSFET technology
1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
PMV32UP
20 V, 4 A P-channel Trench MOSFET
Rev. 1 — 11 March 2011 Product data sheet
Table 1. Quick reference data
VDS drain-source
voltage=25°C ---20 V
VGS gate-source voltage -8 - 8 V drain current VGS =-4.5V; Tamb =25°C [1] ---4 A
Static characteristics
RDSon drain-source
on-state
resistance
VGS =-4.5V; ID =-2.4A; =25°C 3236mΩ
NXP Semiconductors PMV32UP
20 V, 4 A P-channel Trench MOSFET Pinning information Ordering information Marking
[1] % = placeholder for manufacturing site code
Table 2. Pinning information
Table 3. Ordering information
PMV32UP TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
PMV32UP NF%
NXP Semiconductors PMV32UP
20 V, 4 A P-channel Trench MOSFET Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj =25°C - -20 V
VGS gate-source voltage -8 8 V drain current VGS =-4.5 V; Tamb =25°C [1] --4 A
VGS =-4.5 V; Tamb =100°C [1] --2.5 A
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - -16 A
Ptot total power dissipation Tamb =25°C [2] - 510 mW
[1] - 930 mW
Tsp=25°C - 4150 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1] --1 A
NXP Semiconductors PMV32UP
20 V, 4 A P-channel Trench MOSFET Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Table 6. Thermal characteristics
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 207 245 K/W
[2] - 117 135 K/W
Rth(j-sp) thermal resistance
from junction to solder
point 2530K/W
NXP Semiconductors PMV32UP
20 V, 4 A P-channel Trench MOSFET
NXP Semiconductors PMV32UP
20 V, 4 A P-channel Trench MOSFET Characteristics
Table 7. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =-250µA; VGS =0V; Tj=25°C -20 --V
VGSth gate-source threshold
voltage =-250µA; VDS =VGS; Tj=25°C -0.45 -0.7 -0.95 V
IDSS drain leakage current VDS =-20 V; VGS =0V; Tj=25°C ---1 µA
VDS =-20 V; VGS =0V; Tj= 150°C - - -10 µA
IGSS gate leakage current VGS =-8 V; VDS =0V; Tj=25°C - - -100 nA
RDSon drain-source on-state
resistance
VGS =-4.5V; ID =-2.4A; Tj=25°C - 32 36 mΩ
VGS =-4.5V; ID =-2.4A; Tj= 150°C - 4653mΩ
VGS =-2.5V; ID =-2.0A; Tj=25°C - 40 46 mΩ
VGS =-1.8V; ID =-1.8A; Tj=25°C - 55 73 mΩ
gfs forward
transconductance
VDS =-5V; ID =-2.4A; Tj =25°C - 13 - S
Dynamic characteristics
QG(tot) total gate charge ID =-1A; VDS =-10 V; VGS =-4.5V; =25°C 15.5 - nC
QGS gate-source charge - 2.7 - nC
QGD gate-drain charge - 2.2 - nC
Ciss input capacitance VGS =0V; VDS= -10 V; f=1 MHz; =25°C 1890 - pF
Coss output capacitance - 175 - pF
Crss reverse transfer
capacitance
-112 -pF
td(on) turn-on delay time VDS =-10 V; VGS =-5V; RG(ext) =6Ω; =25°C; ID =-1A
-13 -ns rise time - 21 - ns
td(off) turn-off delay time - 95 - ns fall time - 33 - ns
Source-drain diode
VSD source-drain voltage IS =-2.4A; VGS =0V; Tj =25°C - -0.75 -1 V
NXP Semiconductors PMV32UP
20 V, 4 A P-channel Trench MOSFET
NXP Semiconductors PMV32UP
20 V, 4 A P-channel Trench MOSFET

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