PMV31XN ,PMV31XN; uTrenchMOS (tm) extremely low level FETApplications■ Battery powered motor control■ High-speed switch in set top box power supplies.4. Pin ..
PMV31XN ,PMV31XN; uTrenchMOS (tm) extremely low level FET
PMV31XN ,PMV31XN; uTrenchMOS (tm) extremely low level FET
PMV32UP ,20 V, 4 A P-channel Trench MOSFETApplications Relay driver High-side loadswitch High-speed line driver Switching circuits1.4 Qui ..
PMV33UPE ,20 V, single P-channel Trench MOSFETApplications Relay driver High-side loadswitch High-speed line driver Switching circuits1.4 Qui ..
PMV37EN , 30 V, 3.1 A N-channel Trench MOSFET High-speed line driver Switching circuits
PT2259-S , Volume Controller IC
PT2259-S , Volume Controller IC
PT2260-R2 , REMOTE CONTROL ENCODER
PT2260-R4 , REMOTE CONTROL ENCODER
PT2261A , Remote Control Encoder
PT2262-IR , Remote Control Encoder
PMV31XN
PMV31XN; uTrenchMOS (tm) extremely low level FET
PMV31XNμTrenchMOS™ extremely low level FET
Rev. 01 — 26 February 2003 Product data DescriptionN-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PMV31XN in SOT23.
Features TrenchMOS™ technology Very fast switching Low threshold voltage Surface mount package.
Applications Battery powered motor control High-speed switch in set top box power supplies.
Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol gate (g)
SOT23 source (s) drain (d)
MSB003Top view
MBB076
Philips Semiconductors PMV31XNμTrenchMOS™ extremely low level FET
Quick reference data Limiting values
Table 2: Quick reference dataVDS drain-source voltage (DC) 25°C≤Tj≤ 150°C - 20 V drain current (DC) Tsp =25 °C; VGS= 4.5V - 5.9 A
Ptot total power dissipation Tsp =25 °C- 2 W junction temperature - 150 °C
RDSon drain-source on-state resistance VGS= 4.5 V; ID= 1.5 A; Tj =25°C 3137mΩ
VGS= 2.5 V; ID=1 A; Tj =25°C 4453mΩ
Table 3: Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage (DC) 25°C≤Tj≤ 150°C - 20 V
VDSR drain-source voltage (DC) 25°C≤Tj≤ 150 °C; RGS =20kΩ -20 V
VGS gate-source voltage (DC) - ±12 V drain current (DC) Tsp =25 °C; VGS= 4.5V; Figure2 and3 - 5.9 A
Tsp= 100 °C; VGS= 4.5V; Figure2 - 3.75 A
IDM peak drain current Tsp =25 °C; pulsed; tp≤10 μs; Figure3 - 23.7 A
Ptot total power dissipation Tsp =25 °C; Figure1 -2 W
Tstg storage temperature −55 +150 °C junction temperature −55 +150 °C
Source-drain diode source (diode forward) current (DC) Tsp =25°C - 1.7 A
Philips Semiconductors PMV31XNμTrenchMOS™ extremely low level FET
Philips Semiconductors PMV31XNμTrenchMOS™ extremely low level FET
Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristicsRth(j-sp) thermal resistance from junction to solder point Figure4 --60 K/W
Philips Semiconductors PMV31XNμTrenchMOS™ extremely low level FET
Characteristics
Table 5: Characteristics =25 °C unless otherwise specified.
Static characteristicsV(BR)DSS drain-source breakdown voltage ID= 250 μA; VGS =0V =25°C 20 --V= −55°C 18 --V
VGS(th) gate-source threshold voltage ID=1 mA; VDS =VGS; Figure9 =25°C 0.5 - 1.5 V= 150°C 0.35- - V= −55°C - - 1.8 V
IDSS drain-source leakage current VDS =20V; VGS =0V =25°C --1 μA= 150°C - - 100 μA
IGSS gate-source leakage current VGS= ±12 V; VDS=0V - 10 100 nA
RDSon drain-source on-state resistance VGS= 4.5 V; ID= 1.5A; Figure7 and8 - 3137mΩ
VGS= 2.5 V; ID =1A; Figure7 and8 - 4453mΩ
Dynamic characteristicsQg(tot) total gate charge VDD =10V; VGS= 4.5 V; ID =6A; Figure13 - 5.8 - nC
Qgs gate-source charge - 1.4 - nC
Qgd gate-drain (Miller) charge - 1.7 - nC
Ciss input capacitance VGS =0V; VDS=20 V; f=1 MHz; Figure11 - 410 - pF
Coss output capacitance - 115 - pF
Crss reverse transfer capacitance - 80 - pF
td(on) turn-on delay time VDD =10V; RD =10 Ω; VGS= 4.5 V; RG =6Ω -10 - ns rise time -15 - ns
td(off) turn-off delay time - 25 - ns fall time -12 - ns
Source-drain diodeVSD source-drain (diode forward) voltageIS= 1.5 A; VGS =0V; Figure12 - 0.75 1.2 V
Philips Semiconductors PMV31XNμTrenchMOS™ extremely low level FET
