PMV170UN Fast Delivery |IC PHOENIX CO.,LIMITED

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PMV170UN
20 V, single N-channel Trench MOSFET
PMV170UN
20 V, single N-channel Trench MOSFET3 August 2012 Product data sheet Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.
1.2 Features and benefits Low threshold voltage• Very fast switching• Trench MOSFET technology
1.3 Applications Relay driver• High-speed line driver• Low-side loadswitch• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage - - 20 V
VGS gate-source voltage
Tamb = 25 °C - 8 V drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - 1.5 A
Static characteristics
RDSon drain-source on-state
resistance
VGS = 4.5 V; ID = 1 A; Tj = 25 °C - 140 165 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
NXP Semiconductors PMV170UN
20 V, single N-channel Trench MOSFET Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol G gate S source D drain 1 2
TO-236AB (SOT23) S
017aaa253 Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PMV170UN TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code
[1]
PMV170UN EG%
[1] % = placeholder for manufacturing site code
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 20 V
VGS gate-source voltage
Tamb = 25 °C 8 V
VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 1.5 A
VGS = 4.5 V; Tamb = 25 °C [1] - 1 A drain current
VGS = 4.5 V; Tamb = 100 °C [1] - 0.9 A
IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - 4 A
[2] - 325 mWTamb = 25 °C
[1] - 455 mW
Ptot total power dissipation
Tsp = 25 °C - 1140 mW
NXP Semiconductors PMV170UN
20 V, single N-channel Trench MOSFET
Symbol Parameter Conditions Min Max Unit junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb = 25 °C [1] - 0.7 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standardfootprint.(°C)-75 17512525 75-25
017aaa123
Pder(%)
Fig. 1. Normalized total power dissipation as afunction of junction temperature (°C)-75 17512525 75-25
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Ider(%)
Fig. 2. Normalized continuous drain current as afunction of junction temperature
NXP Semiconductors PMV170UN
20 V, single N-channel Trench MOSFET
017aaa741
VDS (V)10-1 102101
10-1(A)
Limit RDSon = VDS/ID
DC; Tsp = 25 °C
DC; Tamb = 25 °C; drain mounting pad 6 cm2
tp = 100 µs
tp = 1 ms
tp = 10 ms
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 333 385 K/Win free air
[2] - 240 275 K/W
Rth(j-a) thermal resistancefrom junction to
ambient in free air; t ≤ 5 s [2] - 203 235 K/W
Rth(j-sp) thermal resistance
from junction to solderpoint 85 100 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.[2]2.
NXP Semiconductors PMV170UN
20 V, single N-channel Trench MOSFET
017aaa733
tp (s)10-3 102 10310110-2 10-12
Zth(j-a)(K/W)
duty cycle = 1
0.75 0.50.33 0.250.2 0.1
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa734
tp (s)10-3 102 10310110-2 10-1
Zth(j-a)(K/W)
duty cycle = 1
0.75 0.50.33 0.250.2 0.1
0.05 0.02
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values Characteristics Max Unit - V 1 V 1 µA 20 µA
NXP Semiconductors PMV170UN
20 V, single N-channel Trench MOSFET
Symbol Parameter Conditions Min Typ Max Unit
VGS = 8 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current
VGS = -8 V; VDS = 0 V; Tj = 25 °C - - 100 nA
VGS = 4.5 V; ID = 1 A; Tj = 25 °C - 140 165 mΩ
VGS = 4.5 V; ID = 1 A; Tj = 150 °C - 208 248 mΩ
VGS = 2.5 V; ID = 1 A; Tj = 25 °C - 175 220 mΩ
RDSon drain-source on-stateresistance
VGS = 1.8 V; ID = 0.25 A; Tj = 25 °C - 237 337 mΩ
gfs forward transconductance VDS = 10 V; ID = 1 A; Tj = 25 °C - 3.4 - S
Dynamic characteristics
QG(tot) total gate charge - 1.1 1.65 nC
QGS gate-source charge - 0.15 - nC
QGD gate-drain charge
VDS = 10 V; ID = 1 A; VGS = 4.5 V;
Tj = 25 °C 0.3 - nC
Ciss input capacitance - 83 - pF
Coss output capacitance - 37 - pF
Crss reverse transfercapacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C 26 - pF
td(on) turn-on delay time - 6 - ns rise time - 12 - ns
td(off) turn-off delay time - 16 - ns fall time
VDS = 10 V; ID = 1 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C 8 - ns
Source-drain diode
VSD source-drain voltage IS = 0.7 A; VGS = 0 V; Tj = 25 °C - 0.8 1.2 V
017aaa742(A)
4.5VV VGS=2.2V
2.5VV
017aaa743
10-3(A)
VGS (V)0 1.20.90.3 0.6
min typ max
Tj = 25 °C; VDS = 5 V
Fig. 7. Sub-threshold drain current as a function of
NXP Semiconductors PMV170UN
20 V, single N-channel Trench MOSFET
ID (A)0 542 31
017aaa744
RDSon(mΩ)
1.6V 1.8V 2V 2.2V
2.5VV
4.5V
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a functionof drain current; typical values
VGS (V)0 1084 62
017aaa745
RDSon(mΩ)=25°C=150°C
ID = 1 A
Fig. 9. Drain-source on-state resistance as a functionof gate-source voltage; typical values
017aaa746
VGS (V)0 321(A)= 25°C Tj=150°C
VDS > ID × RDSon
Tj (°C)-60 1801200 60
017aaa584
Fig. 11. Normalized drain-source on-state resistanceas a function of junction temperature; typical
values

Partno	Mfg	Dc	Qty	Available	Descript
PMV170UN	NXP/PH	N/a	10000	avai	20 V, single N-channel Trench MOSFET