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Partno	Mfg	Dc	Qty	Available	Descript
PMST3906	NXP	N/a	30000	avai	40 V, 200 mA PNP switching transistor

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PMST3906
40 V, 200 mA PNP switching transistor
Product profile1.1 General description
PNP switching transistorina SOT323 (SC-70) very small Surface-Mounted Device (SMD)
plastic package.
NPN complement: PMST3904.
1.2 Features Collector current: IC ≤−200 mA Collector-emitter voltage: VCEO ≤−40V Very small SMD plastic package
1.3 Applications General amplification and switching
1.4 Quick reference data Pinning information
PMST3906
40 V, 200 mA PNP switching transistor
Rev. 05 — 29 April 2009 Product data sheet
Table 1. Quick reference data
VCEO collector-emitter voltage open base - - −40 V collector current - - −200 mA
Table 2. Pinning base emitter collector
sym013
NXP Semiconductors PMST3906
40 V, 200 mA PNP switching transistor Ordering information Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 3. Ordering information
PMST3906 SC-70 plastic surface-mounted package; 3 leads SOT323
Table 4. Marking codes
PMST3906 *2A
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VCBO collector-base voltage open emitter - −40 V
VCEO collector-emitter voltage open base - −40 V
VEBO emitter-base voltage open collector - −6V collector current - −200 mA
ICM peak collector current single pulse;≤ 1ms −200 mA
IBM peak base current single pulse;≤ 1ms −100 mA
Ptot total power dissipation Tamb≤25°C [1]- 200 mW junction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
Table 6. Thermal characteristics
Rth(j-a) thermal resistance from junction
to ambient
in free air [1]- - 625 K/W
NXP Semiconductors PMST3906
40 V, 200 mA PNP switching transistor Characteristics
Table 7. Characteristics
Tamb =25 °C unless otherwise specified.
ICBO collector-basecut-off
current=0 A; VCB= −30V - - −50 nA
IEBO emitter-base cut-off
current=0 A; VEB= −6V - - −50 nA
hFE DC current gain VCE= −1V= −0.1 mA 60 - -= −1mA 80 - -= −10 mA 100 - 300= −50 mA 60 - -= −100 mA 30 - -
VCEsat collector-emitter
saturation voltage= −10 mA; IB= −1mA - - −250 mV= −50 mA; IB= −5mA - - −400 mV
VBEsat base-emitter
saturation voltage= −10 mA; IB= −1mA - - −850 mV= −50 mA; IB= −5mA - - −950 mV delay time IC= −10 mA;
IBon=−1 mA;
IBoff =1mA
--35 ns rise time - - 35 ns
ton turn-on time - - 70 ns storage time - - 225 ns fall time - - 75 ns
toff turn-off time - - 300 ns collector capacitanceIE =ie =0A; VCB= −5V;
f=1MHz - 4.5 pF emitter capacitance IC =ic =0A;
VEB= −500 mV;
f=1MHz
--10 pF transition frequency IC= −10 mA;
VCE= −20V;= 100 MHz
250 - - MHz noise figure IC= −100 μA;
VCE=−5 V; RS =1kΩ;=10Hzto 15.7 kHz
--4 dB
NXP Semiconductors PMST3906
40 V, 200 mA PNP switching transistor
NXP Semiconductors PMST3906
40 V, 200 mA PNP switching transistor Test information
NXP Semiconductors PMST3906
40 V, 200 mA PNP switching transistor Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section14.
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
PMST3906 SOT323 4 mm pitch, 8 mm tape and reel -115 -135

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