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PMST3904
NPN switching transistor
NXP Semiconductors Product data sheet
NPN switching transistor PMST3904
FEATURES Collector current capability IC = 200 mA Collector-emitter voltage VCEO = 40 V.
APPLICATIONS General amplification and switching.
DESCRIPTIONNPN switching transistor in a SOT323 plastic package.
PNP complement: PMST3906.
MARKING
Note ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = W: Made in China.
QUICK REFERENCE DATA
PINNING
ORDERING INFORMATION
NXP Semiconductors Product data sheet
NPN switching transistor PMST3904
LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).
Note Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note Transistor mounted on an FR4 printed-circuit board.
NXP Semiconductors Product data sheet
NPN switching transistor PMST3904
CHARACTERISTICSTamb = 25 °C unless otherwise specified.
Note Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
NXP Semiconductors Product data sheet
NPN switching transistor PMST3904
NXP Semiconductors Product data sheet
NPN switching transistor PMST3904
