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Partno	Mfg	Dc	Qty	Available	Descript
PMR280UN	NXP	N/a	19748	avai	N-channel TrenchMOS ultra low level FET

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PMR280UN
N-channel TrenchMOS ultra low level FET
Product profile1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in ultra small
Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
1.2 Features and benefits Surface mounted package Low on-state resistance Footprint 63% smaller than SOT23 Low threshold voltage
1.3 Applications Driver circuits  Switching in portable appliances
1.4 Quick reference data Pinning information
PMR280UN
N-channel TrenchMOS ultra low level FET
Rev. 2 — 3 February 2012 Product data sheet
Table 1. Quick reference data
VDS drain-source voltage Tj≥25 °C; Tj≤ 150°C --20 V drain current Tsp =25 °C; VGS= 4.5V --0.98 A
VGS gate-source voltage -8 - 8 V
Static characteristics
RDSon drain-source on-state
resistance
VGS =4.5 V; ID= 0.2 A; Tj=25°C - 280 340 mΩ
Table 2. Pinning information
NXP Semiconductors PMR280UN
N-channel TrenchMOS ultra low level FET Ordering information Marking Limiting values
Table 3. Ordering information
PMR280UN SC-75 plastic surface-mounted package; 3 leads SOT416
Table 4. Marking codes
PMR280UN R5
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj≥25 °C; Tj≤ 150°C - 20 V
VDGR drain-gate voltage Tj≥25 °C; Tj≤ 150 °C; RGS =20kΩ -20 V
VGS gate-source voltage -8 8 V drain current Tsp =25 °C; VGS= 4.5V - 0.98 A
Tsp= 100 °C; VGS= 4.5V - 0.62 A
IDM peak drain current Tsp=25 °C; pulsed; tp≤10µs - 1.97 A
Ptot total power dissipation Tsp=25°C - 0.53 W
Tstg storage temperature -55 150 °C junction temperature -55 150 °C
Source-drain diode source current Tsp=25°C - 0.44 A
ISM peak source current Tsp=25 °C; pulsed; tp≤10µs - 0.88 A
NXP Semiconductors PMR280UN
N-channel TrenchMOS ultra low level FET
NXP Semiconductors PMR280UN
N-channel TrenchMOS ultra low level FET Thermal characteristics
Table 6. Thermal characteristics
Rth(j-sp) thermal resistance
from junction to solder
point - 235 K/W
NXP Semiconductors PMR280UN
N-channel TrenchMOS ultra low level FET Characteristics
Table 7. Characteristics
Static characteristics
V(BR)DSS drain-source
breakdown voltage =1µA; VGS =0V; Tj=25°C 20 --V =1µA; VGS =0V; Tj= -55°C 18 --V
VGS(th) gate-source threshold
voltage =0.25mA; VDS =VGS; Tj=25°C 0.45 0.7 1 V =0.25mA; VDS =VGS; Tj= 150°C 0.25 - - V =0.25mA; VDS =VGS; Tj= -55°C --1.2 V
IDSS drain leakage current VDS =20V; VGS =0V; Tj=25°C --1 µA
VDS =20V; VGS =0V; Tj= 150°C - - 100 µA
IGSS gate leakage current VGS =8V; VDS =0V; Tj=25°C - 10 100 nA
VGS =-8 V; VDS =0V; Tj=25°C - 10 100 nA
RDSon drain-source on-state
resistance
VGS =4.5 V; ID= 0.2 A; Tj=25°C - 280 340 mΩ
VGS =4.5 V; ID= 0.2 A; Tj= 150°C - 448 544 mΩ
VGS =2.5 V; ID= 0.1 A; Tj=25°C - 360 430 mΩ
VGS =1.8 V; ID= 0.075 A; Tj=25°C - 460 660 mΩ
Dynamic characteristics
QG(tot) total gate charge ID =1A; VDS =10V; VGS =4.5V; =25°C
-0.89 -nC
QGS gate-source charge - 0.13 - nC
QGD gate-drain charge - 0.18 - nC
Ciss input capacitance VDS =20V; VGS=0 V; f=1 MHz; =25°C
-45 -pF
Coss output capacitance - 11 - pF
Crss reverse transfer
capacitance -pF
td(on) turn-on delay time VDS =10V; RL =10 Ω; VGS =4.5V;
RG(ext) =6 Ω; Tj =25°C
-4.5 -ns rise time - 10 - ns
td(off) turn-off delay time - 18.5 - ns fall time -5 -ns
Source-drain diode
VSD source-drain voltage IS= 0.3 A; VGS =0V; Tj=25°C - 0.83 1.2 V
NXP Semiconductors PMR280UN
N-channel TrenchMOS ultra low level FET
NXP Semiconductors PMR280UN
N-channel TrenchMOS ultra low level FET

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