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PMN80XP
20 V, single P-channel Trench MOSFET
Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits RDSon specified at 1.8 V operation Trench MOSFET technology Fast switching
1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Pinning information
PMN80XP
20 V, single P-channel Trench MOSFET
Rev. 1 — 8 May 2012 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tamb=25°C ---20 V
VGS gate-source voltage -12 - 12 V drain current VGS =-4.5V; Tamb =25°C; t ≤ 5 s [1] ---3.2 A
Static characteristicsRDSon drain-source on-state
resistance
VGS =-4.5V; ID =-2.5A; Tj=25°C - 80 102 mΩ
Table 2. Pinning information
NXP Semiconductors PMN80XP
20 V, single P-channel Trench MOSFET Ordering information Marking Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 3. Ordering informationPMN80XP TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codesPMN80XP WA
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tamb =25°C - -20 V
VGS gate-source voltage -12 12 V drain current VGS =-4.5 V; Tamb =25°C; t ≤ 5 s [1] --3.2 A
VGS =-4.5 V; Tamb =25°C [1] --2.5 A
VGS =-4.5 V; Tamb =100°C [1] --1.6 A
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - -10 A
Ptot total power dissipation Tamb =25°C [2] - 385 mW
[1] - 925 mW
Tsp=25°C - 4000 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1] --1 A
NXP Semiconductors PMN80XP
20 V, single P-channel Trench MOSFETNXP Semiconductors PMN80XP
20 V, single P-channel Trench MOSFET Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2, t ≤ 5 s
Table 6. Thermal characteristicsRth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 281 325 K/W
[2] - 116 135 K/W
[3] - 7385K/W
Rth(j-sp) thermal resistance
from junction to solder
point 2731K/W
NXP Semiconductors PMN80XP
20 V, single P-channel Trench MOSFET
