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PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits Low RDSon Very fast switching Trench MOSFET technology
1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits
1.4 Quick reference data[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Pinning information
PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
Rev. 1 — 21 April 2011 Product data sheet
Table 1. Quick reference dataVDS drain-source voltage Tj=25°C ---20 V
VGS gate-source voltage -12 - 12 V drain current VGS =-4.5V; Tamb =25°C [1] ---4.1 A
Static characteristicsRDSon drain-source on-state
resistance
VGS =-4.5V; ID =-2.4A; Tj=25°C - 48 55 mΩ
Table 2. Pinning information
NXP Semiconductors PMN48XP
20 V, 4.1 A P-channel Trench MOSFET Ordering information Marking Limiting values[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 3. Ordering informationPMN48XP TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457
Table 4. Marking codesPMN48XP ZV
Table 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).
VDS drain-source voltage Tj =25°C - -20 V
VGS gate-source voltage -12 12 V drain current VGS =-4.5 V; Tamb =25°C [1] --4.1 A
VGS =-4.5 V; Tamb =100°C [1] --2.5 A
IDM peak drain current Tamb=25 °C; single pulse; tp≤10µs - -20 A
Ptot total power dissipation Tamb =25°C [2] - 530 mW
[1] - 1285 mW
Tsp=25°C - 6250 mW junction temperature -55 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode source current Tamb =25°C [1] --1.4 A
NXP Semiconductors PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
NXP Semiconductors PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
NXP Semiconductors PMN48XP
20 V, 4.1 A P-channel Trench MOSFET Thermal characteristics[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
Table 6. Thermal characteristicsRth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 204 235 K/W
[2] - 8497K/W
Rth(j-sp) thermal resistance
from junction to solder
point 1720K/W
NXP Semiconductors PMN48XP
20 V, 4.1 A P-channel Trench MOSFET Characteristics
Table 7. Characteristics
Static characteristicsV(BR)DSS drain-source
breakdown voltage =-250µA; VGS =0V; Tj=25°C -20 --V
VGSth gate-source threshold
voltage =-250µA; VDS =VGS; Tj=25°C -0.75 -1 -1.25 V
IDSS drain leakage current VDS =-20 V; VGS =0V; Tj=25°C ---1 µA
VDS =-20 V; VGS =0V; Tj= 150°C - - -10 µA
IGSS gate leakage current VGS =-12 V; VDS =0V; Tj=25°C - - -100 nA
RDSon drain-source on-state
resistance
VGS =-4.5V; ID =-2.4A; Tj=25°C - 48 55 mΩ
VGS =-4.5V; ID =-2.4A; Tj= 150°C - 7080mΩ
VGS =-2.5V; ID =-2 A; Tj=25°C - 72 82 mΩ
gfs forward
transconductance
VDS =-5V; ID =-2.4A; Tj =25°C - 10 - S
Dynamic characteristicsQG(tot) total gate charge ID =-1A; VDS =-10 V; VGS =-4.5V; =25°C 8.7 13 nC
QGS gate-source charge - 1.8 - nC
QGD gate-drain charge - 1.7 - nC
Ciss input capacitance VGS =0V; VDS= -10 V; f=1 MHz; =25°C 1000 - pF
Coss output capacitance - 130 - pF
Crss reverse transfer
capacitance
-90 - pF
td(on) turn-on delay time VDS =-10 V; VGS =-5V; RG(ext) =6Ω; =25°C; ID =-1A
-15 - ns rise time - 22 - ns
td(off) turn-off delay time - 51 - ns fall time - 22 - ns
Source-drain diodeVSD source-drain voltage IS =-2.4A; VGS =0V; Tj =25°C - -0.75 -1 V
NXP Semiconductors PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
NXP Semiconductors PMN48XP
20 V, 4.1 A P-channel Trench MOSFET
